Transient unbalanced current analysis and suppression for parallel-connected silicon carbide MOSFETs

Du, Min; Ding, Xiaofeng; Gao, Hong; Liang, Jiaqi

doi:10.1109/itec-ap.2014.6941230

Cited by 10 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reason behind improved current sharing is; at a lower gate resistance, the switching speed increases and the effect of V th mismatch become less significant. Another way is to add a suitable resistance only to the gate of the fast device with the lower V th (Du et al, 2014). The fundamental principle behind adding the resistance is to delay the driving signal of the fast device (Du et al, 2014).…”

Section: Imbalance Mitigation Via Source or Gate Resistorsmentioning

confidence: 99%

“…Another way is to add a suitable resistance only to the gate of the fast device with the lower V th (Du et al, 2014). The fundamental principle behind adding the resistance is to delay the driving signal of the fast device (Du et al, 2014). Symmetrical layout is requisite for achieving promising results for both methods.…”

Section: Imbalance Mitigation Via Source or Gate Resistorsmentioning

confidence: 99%

See 1 more Smart Citation

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

View full text Add to dashboard Cite

Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have investigated the design, structure and benefits of module packages. However, a comprehensive and in-depth overview of the discrete package is lacking. Discrete package has the advantages of flexibility, scalability and reduced cost; however, challenges of severe switching oscillations and limited current capacity are associated with it. This review encompasses the switching oscillations and limited current capacity issues of discrete devices. Switching oscillations are categorized in terms of voltage. The underlying oscillation mechanisms are explored in detail. For the current imbalance, the types, root causes and adverse effects in parallel-connected discrete devices application are reviewed. Besides, the most recent techniques to extract stray parameters are also explored. Finally, state-of-the-art methods to mitigate the switching oscillations and the current imbalance are summarized and evaluated. The performance improvement strategies discussed in this paper can assist researchers to better use the discrete package and can stimulate them to come up with new solutions.

show abstract

Section: Imbalance Mitigation Via Source or Gate Resistorsmentioning

confidence: 99%

Section: Imbalance Mitigation Via Source or Gate Resistorsmentioning

confidence: 99%

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

View full text Add to dashboard Cite

show abstract

“…Another reason is the asymmetry of the PCB layout, which has a negative effect on the current sharing of the devices [13]. Moreover, different temperature rise and electromagnetic interference (EMI) between parallel devices are caused by both types of unbalances, reducing the reliability of devices and system [14].…”

Section: Introductionmentioning

confidence: 99%

“…In this way, the impedances of the gate loops are differentiated, suppressing the dynamic unbalance only during turn-on transient. In [14], an extra resistor to the gate of the parallel-connected SiC MOSFET with the lowest threshold is added. As a result, the charging process of C iss of this particular SiC MOSFET is delayed, suppressing the turn-on dynamic unbalance.…”

Section: Introductionmentioning

confidence: 99%

Active Auto-Suppression Current Unbalance Technique for Parallel-Connected Silicon Carbide MOSFETs

2022

View full text Add to dashboard Cite

Nowadays, medium- and high-power applications make use of silicon carbide (SiC) MOSFETs, and many times their parallelization is necessary. Unfortunately, this requirement causes an inevitable current unbalance between power devices, affecting the performance of power switches. Over the last decade, numerous studies have been conducted, proposing various techniques with the capability of mitigating current unbalance for a number of discrete parallel SiC MOSFETs. However, the realization of most methods requires knowledge of the technical characteristics of power devices, adding extra cost to the system, since screening is a time-consuming and costly process. This necessity reduces the possibilities of such a technique being implemented in power electronics applications, preventing the exploitation of the exceptional features of SiC MOSFETs. In addition, most of these techniques can suppress only the current unbalance, which occurs during turn-on and turn-off transitions. In this paper, an active auto-suppression current unbalance technique is proposed, requiring no device screening. The active method is a closed-loop system capable of sensing and eliminating the entire current unbalance between parallel SiC MOSFETs automatically, actively, and independently of the cause. Simulation results are presented to demonstrate the feasibility and effectiveness of the proposed technique.

show abstract

Transient unbalanced current analysis and suppression for parallel-connected silicon carbide MOSFETs

Cited by 10 publications

References 9 publications

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Active Auto-Suppression Current Unbalance Technique for Parallel-Connected Silicon Carbide MOSFETs

Contact Info

Product

Resources

About