Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

Pan, G.; Li, Bing; Heath, Mark; Horsell, D. W.; Wears, M.L.; Taan, Laith Al; Awan, S.A.

doi:10.1016/j.carbon.2013.08.036

Cited by 63 publications

(40 citation statements)

References 40 publications

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“…Since both methods require a transferring process, graphene growth methods that allow for direct formation on silicon substrates have been sought aer and several attempts have been reported. [27][28][29][30][31][32][33][34][35][36][37][38][39][40] In this study, we developed a procedure to grow graphene from a solid-state carbon source directly on silicon substrates. To reduce the complexity of the process, the number of steps, and the cost, we have also developed a direct patterning procedure that allows to produce graphene samples with arbitrary position, size, and shape: notably this procedure does not require any dry etching process.…”

Section: Introductionmentioning

confidence: 99%

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

et al. 2019

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Section: Introductionmentioning

confidence: 99%

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

et al. 2019

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“…Actually, an often adopted approach to synthesize graphene on dielectric substrates is to prepare graphene layers by chemical vapor deposition exploiting metal films catalysts (such as Cu, Ni, Ru, or Co), with successive transfer of these layers on the insulating dielectric. Synthesis of few graphene layers on SiO

_{2}

has been obtained by means of transfer‐free and catalysts‐free procedures.…”

Section: Introductionmentioning

confidence: 99%

Graphene on clean (0001) α-quartz: Numerical determination of a minimum energy path from metal to semiconductor

Colle

Menichetti

Grosso

2016

Phys. Status Solidi B

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By means of DFT calculations, we have individuated a minimum-energy path connecting two energy minima of clean graphene on clean and relaxed oxygen-terminated (0001)’SiOinline image substrate in the inline image-quartz configuration: one characterized by mutual graphene–SiOinline image substrate distance of inline image2.8 Å and weak (van der Waals) bonds between them, the other by mutual distance of inline image1.4 Å, and presence of strong covalent C–O bonds. Our calculations show that the pathway connecting the two minima goes through a transition state and that the two minima are separated by a barrier of inline image2.25 eV. The covalent C–O bonds, which characterize the lower-energy configuration, induce significant corrugation of the graphene overlayer with consequent important modification of its electronic band structure and transport properties. In particular, we show that a small gap (inline imageeV) opens in the electronic band structure of the graphene/SiOinline image system, and the conical features around the Dirac points are lost. Correspondingly, at the graphene/SiOinline image interface, the diffuse inline image conjugation of the isolated graphene layer is modified by the appearance of near’inline image carbon atoms bound to the top oxygens of the SiOinline image. This fact also affects conductances and I–V characteristics which become different along different cell directions of the graphene overlayer. Our analysis suggests that the energy barrier between the van der Waals and the covalent minima could be overcome by applying a uniform pressure on the graphene overlayer due to the formation of chemical bonds which are important for the experimental integration of graphene on Si-compatible technology

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“…[14][15][16][17] Although most of these processes inevitably require substrate transfer procedures, some useful ideas on transfer-free techniques have been suggested. [18][19][20][21][22][23][24][25][26][27][28] To consider real-world applications of graphene, the development of practicable transfer-free processes will be very important. Recently, we reported that multilayered graphene films can be formed directly on insulating SiO 2 /Si substrates by employing a thin metal film as an underlying catalyst film.…”

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confidence: 99%

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

Miyoshi

Mizuno

Arima

et al. 2015

Applied Physics Letters

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Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

Cited by 63 publications

References 40 publications

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

Graphene on clean (0001) α-quartz: Numerical determination of a minimum energy path from metal to semiconductor

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

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