Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

Lagger, P.; Ostermaier, Clemens; Pobegen, Gregor; Pogány, D.

doi:10.1109/iedm.2012.6479033

Cited by 126 publications

(89 citation statements)

References 6 publications

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“…A first type focuses on the analysis of the V TH drift during stress. [3][4][5] In contrast, a second type focuses on the characterization of the quality of the gate dielectrics in terms of interface states and border traps on the fresh devices [6][7][8][9] without discussing the implications on V TH instability during operations. The link between these two type of analyses is still unclear.…”

Section: Correlation Of Interface States/border Traps and Threshold Vmentioning

confidence: 99%

“…1 However, the threshold voltage (V TH ) instability of MIS-HEMTs remains a critical issue. Especially, V TH hysteresis after a positive gate voltage sweep and V TH shift during a positive bias gate stress [2][3][4][5] are important reliability challenges. Therefore, it is important to understand the origin of V TH shift in order to provide technology solutions to minimize these instability issues.…”

Section: Correlation Of Interface States/border Traps and Threshold Vmentioning

confidence: 99%

See 1 more Smart Citation

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Marcon

Bakeroot

et al. 2015

Applied Physics Letters

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Section: Correlation Of Interface States/border Traps and Threshold Vmentioning

confidence: 99%

Section: Correlation Of Interface States/border Traps and Threshold Vmentioning

confidence: 99%

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Marcon

Bakeroot

et al. 2015

Applied Physics Letters

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“…On the other hand, GaN MIS-HEMTs face significant reliability and stability challenges. Among them, instability of the electrical characteristics, in particular VT, after prolonged high voltage stress at high temperature is a serious problem [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Positive-bias temperature instability (PBTI) of GaN MOSFETs

Alamo

2015

2015 IEEE International Reliability Physics Symposium

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-We have investigated the stability of the gate stack of GaN n-MOSFETs under positive gate stress. Devices with a gate dielectric that consists of pure SiO2 or a composite SiO2/Al2O3 bilayer were studied. Our research has targeted the evolution of threshold voltage (VT), subthreshold swing (S) and transconductance (gm) after positive gate voltage stress of different duration at different voltages and temperatures. We have also examined the recovery process after the stress is removed. We have observed positive VT shift (∆VT) in both gate dielectrics under positive gate stress. In devices with a SiO2 gate oxide, we have found that ∆VT is caused by a combination of electron trapping in pre-existing oxide traps and interface trap generation. In devices with a composite SiO2/Al2O3 gate oxide, on the other hand, ∆VT is due to electron trapping in pre-existing oxide traps and generation of near interface oxide traps.

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“…To realize fail-safe operation, the threshold voltage of normally-off mode transistors should be higher than +2 V to prevent an incorrect action. Normallyoff HEMTs based on metal-insulator-semiconductor (MIS) gate structure with full recess AlGaN have been already reported by several groups [3]- [8]. There is low gate leakage, threshold voltage higher than one volt.…”

Section: Introductionmentioning

confidence: 90%