Towards fully compensated ferrimagnetic spin gapless semiconductors for spintronic applications

Abstract

Extensive first-principles calculations suggest that inverse Heusler compounds , , , and are the candidates to achieve fully compensated ferrimagnetic spin gapless semiconductors. It is shown that only the holes can be 100% spin polarized in , while both the excited electrons and the holes around the Fermi level 100% spin polarized in the others. A simple rule for searching potential fully compensated ferrimagnetic spin gapless semiconductors in Heusler compounds is proposed. Due to the spin gapless semiconducting and the fully compensated ferrimagnetic properties, these compounds offer distinct advantage towards the development of the practical spintronic devices.

Special Issue on “Recent Advances in Novel Materials for Future Spintronics”

“…Theoretical predictions of strain-adjustable quaternary spintronic Heusler compounds remain of high importance in the field of spintronics. Similar works can also be found in References [27][28][29][30][31][32].…”

Largest Magnetic Moments in the Half-Heusler Alloys XCrZ (X = Li, K, Rb, Cs; Z = S, Se, Te): A First-Principles Study

“…It is common sense that the DOS can be widely used to discuss the bonding/anti-bonding states and the gap formation, and we should also point out that a similar analytical approach used in this work can be observed in [ 31 , 32 ].…”

Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr 2 MnAl

“…Half-metallic ferromagnets (HMFs) [1], half-metallic fully compensated ferrimagnets (HMFCFs) [5,6], spin gapless semiconductors (SGSs) [7][8][9][10][11][12][13][14][15][16][17][18], and fully compensated ferromagnetic spin gapless semiconductors (FCF-SGSs) [19][20][21] have recently received considerable interest due to their applications in a number of novel spintronic devices. The energy band diagrams for these four kinds of materials are presented in Fig.…”