Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors

Abstract

The carrier mobility of the as-mentioned building block devices depends mainly on the device fabrication technology and the channel semiconductors. The fabrication technology is complex and each of the processes is crucial to the carrier mobility of the as-fabricated building block devices. For example, Park et al. pointed out that the peak electron mobility of graphene field-effect-transistors (FETs) can be improved up to four times by using a cleaner substrate during the device fabrication process. [4] On the other hand, the carrier mobility of the as-mentioned building block devices can be regulated by the crystallinity, growth plane, carrier effective mass, carrier concentration, etc. of channel semiconductors. With a better crystallinity, InGaZnO nanowires (NWs)-, [5] β-Ga 2 O 3 nanosheets-, [6] and black phosphorus filmbased FETs [7] have shown the enhanced mobilities in the kinds of literature, owing to the decreased transport scattering. Meanwhile, with a designed crystal growth plane, the polarity, carrier effective mass, and surface scattering of InP NWs, [8] layered PtSe 2 , [9] and multilayer InSe [10] can be controlled, resulting in the higher mobilities of FETs.

Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensional Layered PbI2 Nanoplates

“…PbI 2 is a P-type semiconductor with a high work function, and Schottky contact will be formed with low work function metals. , As the work function of ITO (4.7 eV) is lower than that of Ni (5.04 eV), the Fermi level will achieve balance and the built-in electric field is dominated by the contact of ITO/PbI 2 . , Thus, the charge carriers’ separation will be enabled without any applied bias forming a self-powered photodetector (Figure a). Similar phenomena are demonstrated in other self-powered photodetectors . When light irradiates the photodetector from ITO (bottom direction, Figure a inset), the current–voltage ( I – V ) characteristics of dark and light (405, 520 and 635 nm) are shown in Figure b.…”

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

“…GaSb NWs are technologically important narrow-bandgap III–V semiconductors ascribed to the physical properties of direct bandgap (∼0.726 eV), zinc blende structure, p-type conductivity, and high hole mobility. They have been explored to build high-performance field-effect transistors (FETs) and near-infrared photodetectors. − Because of the intrinsic light polarization sensitivity, GaSb NWs are also good candidates for near-infrared polarization photodetectors. , Nonetheless, it is still challenging to realize the application of GaSb NW-based photodetectors because of their excessive dark current and the deteriorated surface oxidation, which are also common problems of other III–V semiconductor devices. − The excessive dark current will result in large device noise, and the deteriorated surface oxidation will trap photogenerated carriers, thus downgrading the photoelectric performance of GaSb NWs-based photodetctors. , Recently, the reported sulfur-catalyzed growth of GaSb NWs was found to be an effective way to resolve these problems. Compared with pure GaSb NWs, the obtained sulfur-passivation GaSb NWs have thinner diameters, and the S is not doped into the NW core but distributed on the surface. ,, For instance, in the report of Wang et al, the S-catalyzed chemical vapor deposition (CVD) method was used to grow GaAs x Sb 1– x NWs with Sb x S y and Ga x S y layers being formed on the NWs surface.…”

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

“…The determining factor for μ is scattering effect. [ 28 ] The schematic of the modified a‐IGZO layer and of its resistance during the carrier transport process are shown in Figure S6 (Supporting Information) to prove scattering change. For the post‐treated 41‐nm device, at the on state, the carriers go into the layer with many defects after going through the modified layer with few defects at high speed.…”