Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (∼2Ω/□) without metal CMP nor etching

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

“…The famous FUSI, with low resistivity, include Titanium Silicide (TiSi 2 ), Cobalt Silicide (CoSi 2 ), and Nickel Silicide (NiSi) [287,290]. However, the work function range of CoSi gate is limited [299]. It also suffered from high sensitivity to ambient contamination as well as high consumption rate of silicon.…”

Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies

“…CoSi 2 and NiSi FUSI have already been investigated for this purpose. Both show the advantages of eliminating poly-depletion and low sheet resistance [5,6]. While both CoSi 2 and NiSi are mid-gap materials, tuning of the work function of NiSi by the pre-implantation of B and As into poly-Si has been [6].…”

Dual-work-function metal gates by full silicidation of poly-Si with Co-Ni bi-Layers

“…Among common silicide systems reported, NiSi FUSI has been shown to have the best work function tunability and stable silicide/gate oxide interface [7]- [12]. The CoSi work function tuning is limited [13], while gate oxide integrity is degraded when TiSi is used as a FUSI metal gate [8]. However, NiSi has the poorest thermal stability among the three silicide systems [14].…”

“…In order to optimize threshold voltage ( ) in high-performance devices, a tunable work function is needed for NMOS (in the range of 4.1-4.4 eV) and PMOS (4.8-5.1 eV) devices [3]. Several approaches have been investigated, including midgap metal gate [3], dual-metal gates in CMOS integration [4]- [6], and fully silicided (FUSI) metal gate [7]- [13]. FUSI is an extension of self-aligned silcide (SALICIDE) technology [14]- [16] that is widely used in CMOS devices.…”