Total Ionizing Dose Effects on Ge Channel &lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;$p$&lt;/tex&gt;&lt;/formula&gt;FETs with Raised &lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;${\rm Si}_{0.55}{\rm Ge}_{0.45}$&lt;/tex&gt;&lt;/formula&gt; Source/Drain

Wang, Liang; Zhang, En Xia; Schrimpf, Ronald D.; Fleetwood, D.M.; Duan, Guo Xing; Hachtel, Jordan A.; Zhang, Cher Xuan; Reed, Robert A.; Samsel, Isaak K.; Alles, Michael L.; Witters, L.; Collaert, N.; Linten, Dimitri; Mitard, J.; Chisholm, Matthew F.; Pantelides, Sokrates T.; Galloway, K.F.

doi:10.1109/tns.2015.2489019

IEEE Trans. Nucl. Sci.

2015

DOI: 10.1109/tns.2015.2489019

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Total Ionizing Dose Effects on Ge Channel <formula formulatype="inline"><tex Notation="TeX">$p$</tex></formula>FETs with Raised <formula formulatype="inline"><tex Notation="TeX">${\rm Si}_{0.55}{\rm Ge}_{0.45}$</tex></formula> Source/Drain

Liang Wang

En Xia Zhang

Ronald D. Schrimpf

et al.

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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

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Nuclear Instruments and Methods in Physics Research Section A:

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Total Ionizing Dose Effects on Ge Channel <formula formulatype="inline"><tex Notation="TeX">$p$</tex></formula>FETs with Raised <formula formulatype="inline"><tex Notation="TeX">${\rm Si}_{0.55}{\rm Ge}_{0.45}$</tex></formula> Source/Drain

Cited by 8 publications

References 18 publications

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling

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