Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements

Abstract

Chalcogenide thin film resistor elements are being integrated with CMOS structures for nonvolatile memory applications. This paper reports on the first total dose and imprint data published on this new technology demonstrating no observable effects on chalcogenide films after exposure to 1 Mrad(Si) and 125 C temperature.

High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells

“…Ferroelectrics in FRAMs rely on two-state metastable atomic cell structure, magnetic domains are used in MRAMs, and a amorphous-to-crystalline phase change in CRAMs. In all cases, the change from one state to another is virtually insensitive to ionizing radiation; cell survivability for MRAM, FRAM, and CRAM has been demonstrated to total ionizing doses (TID) in excess of 1 Mrad(Si) [1]- [3]). Thus, these technologies are appealing to the radiation community, which can take advantage of the state-of-the-art, provided measures are taken to mitigate single event effects (SEE) resulting from ion strikes.…”

Progress on a New Non-Volatile Memory for Space Based on Chalcogenide Glass

“…Since the data in a chalcogenide memory element is stored as a structural phase rather than an electrical charge or state, it is expected to be impervious to ionizing radiation effects (Bernacki, 2000). This inherent radiation tolerance of the chalcogenide material and demonstrated write speeds more than 1000 times faster than commercially available non-volatile memories make it attractive for space-based applications.…”

Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

“…Amorphous phases are characterized by low reflectivity and high resistivity while crystalline phases show high reflectivity and low resistivity [3]. Among these materials, Ge 2 Sb 2 Te 5 (GST) has been intensively studied for its excellent thermal stability and high switching rate [4][5][6]. Phase change random access memory (PRAM) has been regarded as the most promising universal nonvolatile memories by the rapid reversible phase change induced by the single pulse in the Ge 2 Sb 2 Te 5 film [7].…”