Tomographic analysis of dilute impurities in semiconductor nanostructures

Nanomechanical detection of nuclear magnetic resonance using a silicon nanowire oscillator

“…1. The SiNW used in this work was grown epitaxially on a Si[111] substrate using a controlled-diameter vapor-liquid-solid approach with silane as a precursor at 600 °C 8 . The SiNW was approximately 15-μm long with a tip diameter of 35 nm and a base diameter of 200 nm.…”

Nonuniform Nanowire Doping Profiles Revealed by Quantitative Scanning Photocurrent Microscopy

“…Dopant homojunctions have been realized in Si nanowires synthesized using the vapor-liquid-solid (VLS) growth mechanism by in situ doping, [8,18] but unintentional surface doping caused by vapor-solid (VS) deposition on the sides of the nanowires during growth [19] can complicate the formation of strictly axial homojunctions. Evidence of surface doping has been seen in phosphorous-doped Ge nanowires by electrical characterization [19] and atom probe tomography, [20,21] and in boron-doped Si nanowires by Raman spectroscopy. [22] In each of these cases, the nanowires were highly tapered, which is indicative of significant VS deposition during synthesis.…”

“…We used pulsed laser atom probe (PLAP) tomography to confirm that surface doping during VLS growth is the source of the radial variation in dopant concentration. We have previously demonstrated the use of PLAP tomography for quantitative compositional analysis of semiconductor nanowires, [20,21,28,29] and we refer the reader to these publications for more details regarding the technique. For atom probe analysis, a conformal Ge shell was deposited in situ on P-doped silicon nanowires to serve as a marker of the nanowire surface.…”

Silicon Nanowires Feel the Force of Magnetic Resonance

“…• C. 8 The SiNW was approximately 15 μm long with a tip diameter of 35 nm and a base diameter of 200 nm. Figure 2(a) shows several SiNWs representative of the type used here.…”