TOF-LEIS Characterization and Growth of GaN Thin Films Grown with ECR and NH3

Kim, E.; Bensaoula, A.; Rusakova, I.; Shultz, A. N.; Waters, K.

doi:10.1557/proc-449-319

Cited by 3 publications

(3 citation statements)

References 9 publications

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“…Others are using MSRI to monitor GaN thin film growth [33][34][35][36][37]. It has been shown that the Ga+/IT'_ MSRI ion ratio is indicative of rhe film quality.…”

Section: Red-time In Situ Tof-lsars Anaivsis Of Thin Film Depositionmentioning

confidence: 99%

In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

Smentkowskiv¹,

Krauss

Auciello

et al. 1999

MRS Proc.

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Time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1–2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is a variant of DRS capable of isotopic resolution for all surface species - including H and He. The advantages and limitations of each of these techniques will be discussed.The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dual functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.

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“…Others are using MSRI to monitor GaN thin film growth [33][34][35][36][37]. It has been shown that the Ga+/IT'_ MSRI ion ratio is indicative of rhe film quality.…”

Section: Red-time In Situ Tof-lsars Anaivsis Of Thin Film Depositionmentioning

confidence: 99%

In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

Smentkowskiv¹,

Krauss

Auciello

et al. 1999

MRS Proc.

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“…10,11 Since then, many more research groups have become interested and have initiated research using the technology. Device quality GaN, InGaN, and AlGaN thin films with growth rates as high as 1 m/h, with both n-and p-type doping, have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN

Kim

Berishev

Bensaoula

et al. 1999

Journal of Applied Physics

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High growth rate GaN thin films were successfully grown by gas source molecular beam epitaxy and studied in situ by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and reflection high energy electron diffraction (RHEED). We show that TOF-MSRI allows for in situ monitoring and control of sapphire surface chemistry and its nitridation. In the latter case, TOF-MSRI is more sensitive to the surface changes during nitridation than RHEED. Using both RHEED and TOF-MSRI, growth of low-temperature GaN buffer layers was monitored, and their recrystallization and island-like nature were demonstrated. A model describing the probable growth mechanism for gas source molecular beam epitaxy of GaN is suggested. The model explains both the chemical dissociation of ammonia at low temperature and the origin of Ga to N TOF-MSRI peak ratio changes for various Ga and ammonia fluxes. High-resolution transmission electron microscopy studies confirm that GaN films grown with a buffer layer have excellent structural quality without any evidence of interfacial defects. Those without a buffer layer are highly defective.

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“…[1][2][3] GaN thin films have been grown with many different techniques such as metal-organic vapor phase epitaxy ͑MOVPE͒, chemical vapor deposition, and molecular beam epitaxy with nitrogen species generated via ion beams, plasma sources or NH 3 . [4][5][6] Chemical beam epitaxy ͑CBE͒ is a powerful technique that has an established record in the growth of complex III-V semiconductor heterostructures at low temperatures, with precise control of interfacial structure and material composition. 7 As a high vacuum growth technique, it is also compatible with in situ surface characterization tools such as reflection high energy electron diffraction ͑RHEED͒ and low energy ion scattering.…”

mentioning

confidence: 99%

Nucleation and growth of chemical beam epitaxy gallium nitride thin films

Kim

Berishev

Bensaoula

et al. 1997

Applied Physics Letters

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Gallium nitride films have been grown on (0001) sapphire substrates by chemical beam epitaxy (CBE) using triethyl gallium (TEG) and ammonia (NH3) precursors. Prior to the CBE epi-GaN layer growth, electron cyclotron resonance plasma-assisted metal-organic molecular beam epitaxy was utilized to deposit a nucleation layer at lower temperatures. The crystallinity of CBE-grown GaN films was found to be strongly growth–temperature dependent. The degree of crystallinity was correlated with the surface carbon composition as measured in situ by mass spectroscopy of recoiled ions. The optimum growth–temperature range for CBE GaN growth was found to be between 800 and 825 °C. Within this narrow window, thin films with streaky two-dimensional reflection high-energy electron diffraction patterns and good photoluminescence properties were obtained. The surface rms roughness, as measured by atomic force microscopy, was as low as 40 Å/1 μm2 for the highest quality thin films; lattice-resolved images supported the deposition of crystalline GaN revealing hexagonal structures with the spacing anticipated for GaN.

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TOF-LEIS Characterization and Growth of GaN Thin Films Grown with ECR and NH3

Cited by 3 publications

References 9 publications

In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN

Nucleation and growth of chemical beam epitaxy gallium nitride thin films

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