Titanium oxynitride thin films sputter deposited by the reactive gas pulsing process

Chappé, J.M.; Martin, Nicolas; Lintymer, Jan; Sthal, F.; Terwagne, G.; Takadoum, J.

doi:10.1016/j.apsusc.2006.12.004

Cited by 106 publications

(53 citation statements)

References 24 publications

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“…For N 2 PPs sufficient to introduce significant nitrogen into the films, N/O stoichiometry varies nonlinearly as a function of the ratio of N 2 and O 2 gas flow rates, highlighting the importance of careful control and calibration of the reaction gas atmosphere. 20,21,[25][26][27][28][29] Using a variable leak valve to control O 2 PP, we demonstrate the ability to carefully control O 2 PPs and fine-tune oxynitride chemistries. We further discuss a heuristic approach to rapidly obtain the optimal O 2 PP for depositing oxynitride films.…”

Section: Introductionmentioning

confidence: 99%

Combining reactive sputtering and rapid thermal processing for synthesis and discovery of metal oxynitrides

et al. 2015

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Recent efforts have demonstrated enhanced tailoring of material functionality with mixed anion materials, yet exploratory research with mixed anion chemistries is limited by the sensitivity of these materials to synthesis conditions. Synthesis of a particular metal oxynitride compound by traditional reactive annealing requires specific, limited ranges of both oxygen and nitrogen chemical potentials to establish equilibrium between the solid-state material and a reactive atmosphere. Using Ta-O-N as an example system, we describe a combination of reactive sputter deposition and rapid thermal processing (RTP) for synthesis of mixed anion inorganic materials. Heuristic optimization of reactive gas pressures to attain a desired anion stoichiometry is discussed, and the ability of RTP to enable amorphous to crystalline transitions without preferential anion loss is demonstrated through the controlled synthesis of nitride, oxide, and oxynitride phases.

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Section: Introductionmentioning

confidence: 99%

Combining reactive sputtering and rapid thermal processing for synthesis and discovery of metal oxynitrides

et al. 2015

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“…Dc magnetron sputtering was successfully combined with reactive gas pulsing process to get crystalline TiO x N y without thermal annealing [29][30][31]. With the same purpose Herman et al employed dc pulsed dual magnetron working with repetition frequency 100 kHz and duty cycle 50 % [34].…”

Section: Introductionmentioning

confidence: 99%

“…Various deposition techniques, e.g. pulsed laser deposition (PLD) [15][16][17], sol-gel methods [18][19][20], ion-assisted electron beam evaporation [21,22], magnetron sputtering [10,[23][24][25][26][27][28][29][30][31][32][33][34] have been employed to prepare TiO x N y thin films. Owing to its numerous advantages, magnetron sputtering deposition is a well established method for coating which has been already extended to the industry.…”

Section: Introductionmentioning

confidence: 99%

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Straňák¹,

Quaas²,

Bogdanowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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To cite this version:Vitezslav Stranak, Marion Quaas, Robert Bogdanowicz, Hartmut Steffen, Harm Wulff, et al.. Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (28) AbstractThe paper is focused on a study of formation of TiO x N y thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O 2 and N 2 . The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating potential and thermally stabilized at room temperature during deposition process. Post-deposition thermal annealing was not employed. The chemical composition from XPS diagnostic reveals formation of TiO x N y structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N elements incorporation into the Ti-O lattice. Decrease of band-gap to values Eg ∼ 1.6 eV in TiOxNy thin film is attributed to formed Ti-N bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar + , Ti + , Ti) is presented together with peak discharge current.

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“…The distance between the target and the substrate was fixed at 65 mm. The gas flow rates were controlled by a homemade system [21]. All depositions were carried out with an argon flow rate of 2 sccm and a constant pumping speed of 10 L s -1 , which produced an argon partial pressure of 0.28 Pa.…”

Section: Methodsmentioning

confidence: 99%

“…This kind of material has attracted huge attention in recent years due to its potential applications as high refractive index materials in multilayered interference filters [4], as anti-reflecting coatings for solar cells [5], as optical waveguides [6] and as capacitor dielectric in high density dynamic random access memories (DRAMs) [7][8][9]. Compared to silicon dioxide, which has a dielectric constant of 3.9, stoichiometric tantalum oxide Ta 2 O 5 compounds can provide about 5 to 6 times increase in the capacitance density (dielectric constant of Ta 2 O 5 is [20][21][22][23][24][25][26][27]). This could lead to a high packing density in the next generations of DRAMs without reducing the thickness of the dielectric materials to unachievable values.…”

Section: Introductionmentioning

confidence: 99%

Interdependence of structural and electrical properties in tantalum/tantalum oxide multilayers

Cacucci

Loffredo

Potin

et al. 2013

Surface and Coatings Technology

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Dc reactive sputtering was used to deposit tantalum metal/oxide periodic nanometric multilayers using the innovative technique namely, the reactive gas pulsing process (RGPP). Different pulsing periods were used for each deposition to produce metal-oxide periodic alternations included between 5 and 80 nm. HighlightsDc reactive sputtering was implemented with the reactive gas pulsing process.Combination of the structural analyses allowed determining the composition of different phases.HRTEM pointed out the dependence between electrical properties and nanometric and periodic Ti/fcc-TiO/a-TiO 2 multilayers.

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Titanium oxynitride thin films sputter deposited by the reactive gas pulsing process

Cited by 106 publications

References 24 publications

Combining reactive sputtering and rapid thermal processing for synthesis and discovery of metal oxynitrides

Combining reactive sputtering and rapid thermal processing for synthesis and discovery of metal oxynitrides

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Interdependence of structural and electrical properties in tantalum/tantalum oxide multilayers

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