Titanium carbide etching in high density plasma

Hsiao, R.; Miller, Dolores C.; Nguyen, S; Kellock, and Andrew J.

doi:10.1016/s0169-4332(99)00143-9

Cited by 12 publications

(3 citation statements)

References 6 publications

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“…DC magnetron sputtering with a titanium target and acetylene (C 2 H 2 ) gas was used, as described in our previous work [13]. The pattern of interdigitated electrodes was applied on the photoresist film using photolithography and then transferred to the TiC film through RIE using SF 6 as etching gas [14]. Afterwards, the TiC film reacted with chlorine for 5 min at 450 C for converting to CDC.…”

Section: Fabrication Processmentioning

confidence: 99%

Micro-supercapacitors from carbide derived carbon (CDC) films on silicon chips

Huang

Heon

Pech

et al. 2013

Journal of Power Sources

135

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International audienceInterdigitated on-chip micro-supercapacitors based on Carbide Derived Carbon (CDC) films were fabricated and tested. A titanium carbide (TiC) film was patterned and treated with chlorine to obtain a TiC derived carbon (TiC–CDC) film, followed by the deposition of two types of current collectors (Ti/Au and Al) using standard micro-fabrication processes. CDC based micro-supercapacitors were electrochemically characterized by cyclic voltammetry and impedance spectroscopy using a 1 M tetraethylammonium tetrafluoroborate, NEt4BF4, in propylene carbonate (PC) electrolyte. A capacitance of 0.78 mF for the device and 1.5 mF cm−2 as the specific capacitance for the footprint of the device was measured for a 2 V potential range at 100 mV s−1. A specific energy of 3.0 mJ cm−2 and a specific power of 84 mW cm−2 were calculated for the devices. These devices provide a pathway for fabricating pure carbon-based micro-supercapacitors by micro-fabrication, and can be used for powering micro-electromechanical systems (MEMS) and electronic devices

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Section: Fabrication Processmentioning

confidence: 99%

Micro-supercapacitors from carbide derived carbon (CDC) films on silicon chips

Huang

Heon

Pech

et al. 2013

Journal of Power Sources

135

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“…However, there is very limited understanding of the negative charge sheath formed by both the electron and the negative ion. Electronegative plasmas produced in argon and sulfur hexafluoride (SF 6 ) are used to etch silicon [19], silicon nitride [20], silicon carbide [21][22][23][24] and titanium carbide [25] with high etch rates and without film residues. Nevertheless, problems associated with charge accumulation at the trench bottom during highaspect-ratio etching by positive ions have led to systematic research on silicon etching by negative ions [26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Properties of highly electronegative plasmas produced in a multipolar magnetic-confined device with a transversal magnetic filter

Draghici¹,

Stamate²

2010

J. Phys. D: Appl. Phys.

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Highly electronegative plasmas were produced in Ar/SF 6 gas mixtures in a DC discharge with multipolar magnetic confinement and transversal magnetic filter.Langmuir probe and mass spectroscopy were used for plasma diagnostics. Plasma potential drift, the influence of small or large area biased electrodes on plasma parameters, the formation of the negative ion sheath, and etching rates by positive and negative ions have been investigated for different experimental conditions.Reducing the electron temperature below 1 eV the density ratio of negative ion to electron exceeded 100 even for very low amounts of SF 6 gas. The plasma potential drift could be controlled by proper wall conditioning. A large-electrode biased positively had no effect on plasma potential for density ratios of negative ion to electrons larger than 50. For similar electronegativities or higher a negative ion sheath could be formed by applying a positive bias of a few hundred volts.

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“…Plasmas generated with electronegative gas mixtures are often used for materials processing [1]. In particular, inductively coupled plasmas (ICPs) operated with mixtures of SF 6 , CF 4 , Cl 2 , O 2 with rare gases are ubiquitous in many dry etching processes [2][3][4][5][6][7]. The ICP sources have planar, cylindrical, or hemispherical geometries and 0.1-0.3 m dimensions.…”

Section: Introductionmentioning

confidence: 99%

Equilibrium properties of Ar/SF6 inductive plasma discharges

Tuszewski¹,

White²

2002

Plasma Sources Sci. Technol.

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Large-size, low-pressure, and high-density inductive plasma discharges operated with argon and SF 6 gas mixtures are studied experimentally and numerically modelled. The neutral gas and positive ion species are determined from mass spectrometry. The magnitudes and spatial variations of the charged particle densities are obtained from Langmuir probes and from microwave interferometry. A three-fluid, one-dimensional, discharge model is presented, that explains the main features of the data. Most discharges consist of a large electronegative region. The ion density profiles are flat in the bulk plasma, and show strong gradients at the edge. The electron density profiles are less flat, and gradually decrease to about half values near the wall. The electron temperatures and the negative ion concentrations are mostly determined by the ionization, attachment, and recombination rates. These features qualitatively apply to other source geometries and electronegative gas chemistries.

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Titanium carbide etching in high density plasma

Cited by 12 publications

References 6 publications

Micro-supercapacitors from carbide derived carbon (CDC) films on silicon chips

Micro-supercapacitors from carbide derived carbon (CDC) films on silicon chips

Properties of highly electronegative plasmas produced in a multipolar magnetic-confined device with a transversal magnetic filter

Equilibrium properties of Ar/SF6 inductive plasma discharges

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