TiO2/Cu2O heterojunctions for photovoltaic cells application produced by reactive magnetron sputtering

Wisz, G.; Sawicka-Chudy, Paulina; Yavorskyi, R.; Потера, П.; Bester, Mariusz; Głowa, Ł.

doi:10.1016/j.matpr.2019.10.054

Cited by 9 publications

(6 citation statements)

References 21 publications

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“…The next sample, #29, was obtained with a shorter deposition time of 22 min and accordingly reached the thickness of 1201 nm, and for the TiO 2 layer, 41 nm was deposited during 25 min. Thus, this mode is most often observed in heteroepitaxial thin films, which leads to a change in physical properties and has important applications in semiconductor systems [ 71 , 72 ].…”

Section: Discussionmentioning

confidence: 99%

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Wisz,

Sawicka-Chudy,

Sibiński

et al. 2023

Materials

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According to increasing demand for energy, PV cells seem to be one of the best answers for human needs. Considering features such as availability, low production costs, high stability, etc., metal oxide semiconductors (MOS) are a focus of attention for many scientists. Amongst MOS, TiO2 and CuxO seem to be promising materials for obtaining an effective photoconversion effect. In this paper, specific investigation, aimed at the manufacturing of the complete photovoltaic structure based on this concept is described in detail. A set of samples manufactured by DC magnetron sputtering, with various process parameters, is characterized by morphology comparison, layer structure and material composition investigation, and finally by the obtained photovoltaic parameters. Based on SEM studies, it was established that the films are deposited uniformly and complete their formation; without clearly defined faces, the conglomerates of the film grow individually. These are areas with a uniform structure and orientation of atoms. The sizes of conglomerates are in a normal direction range from 20 to 530 nm and increase with film thickness. The film thickness was in the range from 318 to 1654 nm, respectively. The I-V study confirms the photovoltaic behavior of thin film solar cells. The open-circuit voltage (Voc) and short-circuit current density (Jsc) values of the photovoltaic devices ranged from 1.5 to 300 mV and from 0.45 to 7.26 µA/cm3, respectively, which corresponds to the maximum efficiency at the level of 0.01%. Specific analysis of the junction operation on the basis of characteristics flow, Rs, and Rsh values is delivered.

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Section: Discussionmentioning

confidence: 99%

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Wisz,

Sawicka-Chudy,

Sibiński

et al. 2023

Materials

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“…As is well known, in sputtering methods thin films are produced via the condensation of molecular streams of substance onto the surface of a solid body (substrate). The physical properties of thin films depend on the atomic structure and their perfection [30][31][32][33] . They, in turn, are determined by the kinetics of the film formation process.…”

Section: Sputtering Process Of Blocking Layermentioning

confidence: 99%

Impact of blocking layers based on TiO2 and ZnO prepared via direct current reactive magnetron sputtering on DSSC solar cells

Sibiński,

Sawicka-Chudy,

Wisz

et al. 2024

Sci Rep

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The optimization of dye-sensitized solar cells (DSSCs) technology towards suppressing charge recombination between the contact and the electron transport layer is a key factor in achieving high conversion efficiency and the successful commercialization of this type of product. An important aspect of the DSSC structure is the front blocking layer (BL): optimizing this component may increase the efficiency of photoelectron transfer from the dye to the semiconductor by reduction charge recombination at the TiO2/electrolyte and FTO/electrolyte interfaces. In this paper, a series of blocking layer variants, based on TiO2 and ZnO:TiO2, were obtained using the reactive magnetron sputtering method. Material composition, structure and layer thickness were referred to each process parameters. Complete DSSCs with structure FTO/BL/m-TiO2@N719/ EL-HSE/Pt/FTO were obtained on such bases. In the final results, verification of opto-electrical parameters of these cells were tested and used for the conclusions on the optimal blocking layer composition. As the conclusion, application of blocking layer consists of neat TiO2 resulted in improvement of device efficiency. It should be noted that for TiO2:ZnO/CuxO and TiO2/CuxO cells, higher efficiencies were also achieved when pure TiO2 was used as window layer. Additionally it was proven that the admixture of ZnO phase inspires Voc and FF growth, but is overall unfavorable compared to pristine TiO2 blocking layer and the reference cell, according to the final cell efficiency.

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“…Cuprous oxide (Cu 2 O), a commonly studied p-type semiconductor, has been the subject of extensive research in recent decades [10][11][12][13]. This is due to its numerous advantages, such as affordability, non-toxicity, abundance and ease of synthesis.…”

Section: Introductionmentioning

confidence: 99%

Preparation of nanostructured cuprous oxide (Cu₂O) absorber layer for photovoltaic application

Awal,

Tanisa,

Rahman

et al. 2024

Micro & Nano Letters

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In this investigation, a nanostructured Cu2O thin film absorber layer is electrodeposited, exploring the impact of varying negative applied voltages and deposition time. Notably, the Cu2O thin film demonstrated optimal absorbance at −0.95 V, contrasting sharply with a minimum at −0.97 V. The authors' findings underscore that the peak absorbance was achieved at −0.95 V, coinciding with the lowest transmittance observed after 80 min of deposition, aligning with a maximal absorption coefficient of 21 × 103 cm−1. At a deposition time of 5 min, the Cu2O thin film exhibited a noteworthy maximum Urbach energy of 2.00 eV and a minimum steepness parameter of 0.013. In contrast, the lowest Urbach energy was recorded at 0.34 eV, with the highest steepness parameter occurring at an applied voltage of 0.93 V. Furthermore, this study revealed a gradual increase in the refractive index with higher applied voltages, reaching its pinnacle at −1.5 V. These results collectively emphasize the nuanced interplay between applied voltage, deposition time and the optical properties of the nanostructured Cu2O thin film. The observed trends hold significant implications for optimizing the performance of thin film absorber layers, particularly in the context of enhancing absorbance and tailoring optical characteristics for specific applications.

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TiO2/Cu2O heterojunctions for photovoltaic cells application produced by reactive magnetron sputtering

Cited by 9 publications

References 21 publications

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Impact of blocking layers based on TiO2 and ZnO prepared via direct current reactive magnetron sputtering on DSSC solar cells

Preparation of nanostructured cuprous oxide (Cu₂O) absorber layer for photovoltaic application

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TiO2/Cu2O heterojunctions for photovoltaic cells application produced by reactive magnetron sputtering

Cited by 9 publications

References 21 publications

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Formation and Characterization of Stable TiO2/CuxO-Based Solar Cells

Impact of blocking layers based on TiO2 and ZnO prepared via direct current reactive magnetron sputtering on DSSC solar cells

Preparation of nanostructured cuprous oxide (Cu2O) absorber layer for photovoltaic application

Contact Info

Product

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About

Preparation of nanostructured cuprous oxide (Cu₂O) absorber layer for photovoltaic application