TiN<i>x</i>O<i>y</i> transparent electrode material for HgCdTe infrared devices

Wan, Chen

doi:10.1116/1.586283

Cited by 11 publications

(4 citation statements)

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“…They showed that the nitrogen content in the film increases as the growth temperature increases and films deposited on Si (100) exhibit a shift of diffraction peaks to higher Bragg angles. Nevertheless, potential applications of titanium oxynitride films as anti-reflecting coatings [14] and as optically selective absorbing coatings and transparent IR window electrodes [15,16], require further systematic investigations of the growth and the resulting properties of this material.…”

Section: Introductionmentioning

confidence: 99%

Influence of nitrogen content on properties of direct current sputtered TiOxNy films

Mohamed

Kappertz

Ngaruiya

et al. 2004

phys. stat. sol. (a)

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The deposition of optical functional coatings with large rates yet also high refractive index and excellent transparency over a wide spectral range is of paramount importance for many applications. In this study we will demonstrate that TiO x N y films can meet these requirements. The films were deposited by reactive dc magnetron sputtering from a metallic titanium target. The sputtering atmosphere consisted of both Ar as well as oxygen and nitrogen. The starting oxygen partial pressure was 1.14 × 10 -1 Pa which corresponds to the oxidic mode of the Ti target. Then oxygen was being replaced stepwise by nitrogen. Even for high nitrogen partial pressures, only a very small amount of nitrogen incorporation in the films was observed by Rutherford Backscattering Spectroscopy and Secondary Neutral Mass Spectroscopy. This result was compared with simulations based upon thermodynamics, which however showed a significant deviation from experiment that could be explained incorporating kinetic aspects. X-ray reflectometry showed that the density and the deposition rate increase with increasing nitrogen partial pressure. X-ray diffraction revealed that the amount of incorporated oxygen tailors the crystal structure of the TiO x N y films. The optical properties were measured using optical spectroscopy and spectroscopic ellipsometry. The optical band gap was found to decrease from 3.29 to 2.11 eV with increasing nitrogen content in the sputtering gas, while the refractive index was found to increase by 15%. The detected intrinsic stresses in TiO x N y were compressive and had values similar to titanium oxide.

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Section: Introductionmentioning

confidence: 99%

Influence of nitrogen content on properties of direct current sputtered TiOxNy films

Mohamed

Kappertz

Ngaruiya

et al. 2004

phys. stat. sol. (a)

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“…[3,4] Moreover, the presence of oxygen in titanium nitride films leads to a promising functional range of materials, TiN x O y , already used as solar selective absorbers, [5] or transparent windows for infrared detectors. [6,7] However, few works have been published on the growth, structure, and properties of these titanium oxynitride films. [8±12] Further, the electrical properties are almost unexplored, [8] although knowledge of the electrical behavior of such materials could lead to new applications.…”

Section: Introductionmentioning

confidence: 99%

Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures

Fabreguette

Imhoff

Maglione

et al. 2000

Chem. Vap. Deposition

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Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal±organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450 C to 750 C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest deposition temperatures, the temperature dependence of the resistivity revealed a transition from a semiconducting to a metallic behavior. Finally, these electrical properties were correlated with the two morphological transitions.

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“…TiN is widely used as a metallurgical coating for instance in cutting tools as a wear-resistant coating and as a diffusion barrier in large scale integrated circuits. There is also an increasing attention for titanium oxynitride coatings due to their interesting physical properties that lead to applications in optically selective absorbing films to enhance the contrast of cathode-ray tube displays [1], such as antireflection coatings [2], electrically switchable windows [3], transparent IR window electrodes [4], effective diffusion barriers for semiconductor applications [5] and as hard protective metallurgical coatings. It was also reported that such materials can promote in vivo formation of bone-like materials [6].…”

Section: Introductionmentioning

confidence: 99%

TiOxNy coatings grown by atmospheric pressure metal organic chemical vapor deposition

Maury

Duminica

2010

Surface and Coatings Technology

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, Florin-Daniel Duminica. TiOxNy coatings grown by atmospheric pressure metal organic chemical vapor deposition. Surface and Coatings Technology, Elsevier, 2010, vol. 205, pp. 1287-1293. 10.1016/j.surfcoat.2010 Open Archive TOULOUSE Archive Ouverte (OATAO)OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. Any correspondance concerning this service should be sent to the repository administrator: staff-oatao@inp-toulouse.fr. Titanium oxynitride coatings were deposited on various substrates by an original atmospheric pressure metal organic chemical vapor deposition (MOCVD) process using titanium tetra-iso-propoxide as titanium and oxygen precursors and hydrazine as a nitrogen source. The films composition was monitored by controlling the N 2 H 4 mole fraction in the initial reactive gas phase. The variation of the N content in the films results in significant changes in morphological, structural and mechanical properties. When a large excess of the nitrogen source is used the resulting film contains ca 17 at % of nitrogen and forms dense and amorphous TiO x N y films. Growth rates of these amorphous TiO 1.5 N 0.5 coatings as high as 14 μm/h were obtained under atmospheric pressure. The influence of the deposition conditions on the morphology, the structure, the composition and the growth rate of the films is presented. For the particular conditions leading to the growth of amorphous TiO 1.5 N 0.5 coatings, first studies on the mechanical properties of samples grown on stainless steel have revealed a high hardness, a low friction coefficient, and a good wear resistance in unlubricated sliding experiments against alumina which make them very attractive as protective metallurgical coatings.

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TiNxOy transparent electrode material for HgCdTe infrared devices

Cited by 11 publications

References 0 publications

Influence of nitrogen content on properties of direct current sputtered TiOxNy films

Influence of nitrogen content on properties of direct current sputtered TiOxNy films

Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures

TiOxNy coatings grown by atmospheric pressure metal organic chemical vapor deposition

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