Time to Open the 2-μm Window?

Gunning, Fatima C. Garcia; Corbett, Brian

doi:10.1364/opn.30.3.000042

Cited by 44 publications

(27 citation statements)

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“…The main objective of this work is to address the need for development from 1800-2000 nm through the integration of appropriately designed SHREC and SOA chips. Other than the possibility of supporting the applications as mentioned earlier, this wavelength region critically coincides with the "prime spot" for implementation of optical logic and signal processing [29], strong optical Kerr effect on Si [49] as well as the "absorption window" of H 2 O vapor [50]. Favorable on-chip output power of up to 28 mW with a tunable range of 1881-1947 nm is demonstrated.…”

Section: Introductionmentioning

confidence: 92%

“…To date, most fundamental components [20][21][22][23][24][25][26][27][28] have been demonstrated on the platform to great effect. Recent trend suggests an extension of SiPh from the O/C-band to the 2 µm waveband to enable a wide range of applications [29]. Instances include the development of high-speed silicon photonic modulators [30], photodetectors [31] and passive components [32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

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Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

Sia

Wang

et al. 2020

Opt. Express

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In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H 2 O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.

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Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

Sia

Wang

et al. 2020

Opt. Express

View full text Add to dashboard Cite

show abstract

“…Exploring new wavebands for optoelectronics and communications, beyond standardized datacom and telecom regions, opens up new arenas in chemical, biological and medical sensing, imaging and monitoring. Combining (i) group-IV nanophotonics and Si-foundry-compatible processing and (ii) low-loss hollow-core fibers and wideband thulium-doped fiber amplifiers at 2-µm is promising for next-generation on-chip systems [199][200][201]. Advanced strategies have to be conducted for high-performance photodetectors in these areas, as the operation of conventional Si-Ge devices is limited by the Ge cut-off wavelength around 1.6 µm ( Figure 9).…”

Section: Photodiodes Beyond Mainstream Wavebandsmentioning

confidence: 99%

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

et al. 2020

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Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

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“…On the other hand, the thulium-doped fiber amplifier (TDFA) also enables high small-signal gain and low noise figures in the wavelength region [6], [7]. Besides optical communications, it is of note that the 1.9 μm wavelength region enables a wide range of technologies such as H 2 O spectroscopy [8], optical logic, signal processing [9] as well as enabling the optical Kerr effect [10]. In response to the wealth of applications at the 1.9 μm wavelength region, encouraging developments have been made in the area of silicon photonics [11]- [15].…”

Section: Introductionmentioning

confidence: 99%

SiN-SOI Multilayer Platform for Prospective Applications at 2 μm

et al. 2019

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Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thuliumdoped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Siliconon-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935-1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.

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Time to Open the 2-μm Window?

Cited by 44 publications

References 0 publications

Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

SiN-SOI Multilayer Platform for Prospective Applications at 2 μm

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