Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Wu, Hao; Xiaojun, Fu; Guo, Jingwei; Wang, Yuan; Liu, Tao; Hu, Shengdong

doi:10.1109/ted.2021.3140188

Cited by 12 publications

(10 citation statements)

References 26 publications

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“…Hao Wu et al [ 8 ] investigated time-resolved threshold voltage instability under high-temperature gate bias. Under the application of high-temperature forward gate bias conditions (HTGB), the threshold voltage of a p-GaN-AlGaN/GaN-HEMT showed a negative shift, which could be attributed to the defects present in the AlGaN layer.…”

Section: Factors Affecting V Th Driftmentioning

confidence: 99%

“…Khan et al [ 7 ] theoretically and experimentally analyzed the temperature dependence of 2DEG for AlGaN/GaN HEMTs and AlGaN/InGaN/GaN pHEMTs. Wu et al [ 8 ] studied the time-resolved threshold voltage ( V TH ) instability of 650-V Schottky-type gate GaN HEMTs under high-temperature gate bias conditions. By applying forward and reverse bias conditions, it was found that the V TH of GaN HEMTs shifted negatively under high-temperature forward gate bias and positively under high-temperature reverse gate bias.…”

Section: Introductionmentioning

confidence: 99%

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Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

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Section: Factors Affecting V Th Driftmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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“…To date, several potential mechanisms regarding forward-gate-bias induced V TH instability have been proposed, such charges (electrons and holes), storage/emission within the floating p-GaN layer [324,400], and the ionisation of acceptor-like traps in the p-GaN depletion region [401]. Recently, many studies have investigated the V TH instability of the p-GaN HEMTs such as positive bias temperature instability [335], negative bias temperature instability [334], instability induced by OFF-state drain stress [362], stress-induced gate current degradation [336], and instability induced high-temperature reverse gate bias [402]. Yang et al [334] examined the threshold voltage shift under negativebias temperature instability stress conditions, revealing the physical mechanism of threshold voltage shift under different stress conditions.…”

Section: P-gan-based Hemt Structurementioning

confidence: 99%

“…Sayadi et al [400] showed that the balance between the supply and emission of holes in the p-GaN layer causes V TH shift. Wu et al [402] reported the time-resolved threshold voltage instability of p-GaN gate HEMT under the high-temperature gate bias, showing that the negative V TH shift results from the trapped holes and the positive V TH shift gets induced by the holes emission and electrons trapping. The comprehensive research on threshold voltage instability is of great significance for improving the reliability of p-GaN HEMTs and promoting its commercial application in future.…”

Section: P-gan-based Hemt Structurementioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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“…The V TH shift is due to several complex reasons, including acceptor-like traps in p-GaN [ 10 , 11 ], p-GaN gate sidewall leakage [ 12 , 13 , 14 ], low Schottky barrier heights [ 10 ], etc. Therefore, the study of V TH instability of GaN-based HEMTs has been the subject of many research reports [ 15 , 16 , 17 , 18 , 19 , 20 ]. To ensure the safe operation of the power device, the negative V TH drop must be improved.…”

Section: Introductionmentioning

confidence: 99%

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

et al. 2023

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In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact resistance of about 0.6 Ω-mm after annealing at 550 °C. In addition, the threshold voltage shifting of the device was reduced from −0.85 V to −0.74 V after applying a high gate bias stress at 150 °C for 10−2 s. The measured time to failure (TTF) of the device shows that a low thermal budget process can improve the device’s reliability. A 100-fold improvement in HTGB TTF was clearly demonstrated. The study shows a viable method for CMOS-compatible GaN power device fabrication.

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Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Cited by 12 publications

References 26 publications

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

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