Time resolved luminescence of photoexcited p-type gallium arsenide by population mixing

Abstract

A novel technique in time resolved luminescence spectroscopy called population mixing using a subpicosecond cw mode-locked dye laser has been developed and applied to p-type GaAs at low temperatures. Using this technique the relaxation lifetime for electron recombination was measured to be 39±7 ps for p-type GaAs with Zn at 6×1018 cm−3 hole concentration. This is comparable to the relaxation time measured by a streak camera.

Picosecond charge variation of quantum dots under pulsed excitation

“…12,13 A technique more feasible for QD studies, similar to but not identical with pump-probe methods, is excitation corre-lation spectroscopy ͑ECS͒. [14][15][16][17][18][19] In ECS, photoluminescence is excited by pairs of laser pulses separated by a controlled delay. It has been shown to be a powerful tool to investigate transient processes in semiconductors, especially excitonic recombination.…”

Observation of exciton and biexciton processes in CdxZn1−xSe/ZnSe (x=0.2)

“…The cross-correlation luminescence signal at the sum or difference frequency with respect to the time delay between the two pulse trains gives the decay lifetime. 9 The samples were maintained at 10 K in a closed cycle helium cryostat. The temporal resolution of the experimental system is determined by the pulse duration of the laser ͑300 fs͒.…”

Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation

“…Previously, EC has been used to measure carrier decay for materials emitting in the visible and near infrared [2][3][4][5]. Here we show that EC can be extended to the mid-infrared and that EC can be used to estimate the density of mid-gap trap levels.…”