AB STRACTThe existence of negative resistance in double barrier resonant tunneling structures has led to the proposal of various applications for these devices. For many of these applications, stability is an important consideration. This paper will discuss the effect that various device parameters have on stability and on the capability of high frequency device operation. It is concluded that the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices at microwave and millimeter-wave frequencies.