Time-Dependent Analysis of High-Gain Triggering in Semi-insulating GaAs Photoconductive Switches

Shi, Wei; Zhao, Wei; Zhang, Liang; Sun, Xiao Wei

doi:10.1088/0256-307x/18/11/317

Cited by 7 publications

(1 citation statement)

References 5 publications

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“…We have developed the opposed contact, lateral geometry PCSS whose semiconductor material is SI GaAs treated by a series of technologies, and have explored the operation mechanism of linear mode PCSS and nonlinear mode PCSS, and have studied PCSS transient performance, pulse power, PCSS parameters and the effect of them [8, 9]. In this article, the character of UWB radiation of the PCSS triggered by different width laser pulse is investigated.…”

Section: Introductionmentioning

confidence: 99%

Investigation of ultra‐wideband electromagnetic radiation based on SI‐GaAs photoconductive switches

Shi

Jia

2012

Micro & Optical Tech Letters

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A new ultra‐wideband electromagnetic pulse generating based on the photoconductive semiconductor switches (PCSS) is presented. Semi‐insulated Gallium Arsenide is used to develop the PCSS for an ultrashort electromagnetic pulse source. The construction and the work principle of PCSS are illustrated in this paper. The experimental results of ultra‐wide‐band radiation with DC biased GaAs photoconductive semiconductor switch triggered by nanosecond (ns), picosecond (ps), femtosecond (fs) laser pulse, are reported respectively. The radiations of the PCSS triggered by the ns laser pulse, the ps laser pulse and fs laser pulse series illustrate that the electromagnetic pulses would have high repetition of more than 80 MHz and frequency bandwidth of DC‐7.6 GHz. The radiation characteristic of the ultrafast electrical pulse generated by PCSS is analyzed. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:900–904, 2012;, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26683

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Section: Introductionmentioning

confidence: 99%

Investigation of ultra‐wideband electromagnetic radiation based on SI‐GaAs photoconductive switches

Shi

Jia

2012

Micro & Optical Tech Letters

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Analysis of operation mechanism of semi-insulating GaAs photoconductive semiconductor switches

Tian

Shi

2008

Journal of Applied Physics

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This paper reports that the quenched-domain mode of luminous charge domain has been observed in semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSSs) and the typical characteristics of lock-on effect have been explained based on the model of luminous charge domain. It is shown that the domain is formed by photogenerated carriers and the quenched domain is due to the interaction of the circuit self-excitation and transferred-electron oscillation in the bulk of switch. During the transit of the domain, the bias electric field (larger than Gunn threshold) across the switch is modulated by the ac electric field, when the instantaneous bias electric field is swinging below the sustaining field (the minimum electric field required to support the domain), and then the quenched-domain mode is obtained. When PCSSs operate in nonlinear mode, the ultrahigh electric field of domain induced by photogenerated carriers leads to strong impact ionization accompanied by electron-hole recombination radiation in the switch. Therefore new avalanche domains can be nucleated uninterruptedly by the carriers generated by absorption of recombination radiation which causes the effective carrier velocities to be larger than the saturation velocity. Lock-on field resulted from the length proportional number of domains and steadfast electric fields inside and outside the domains, and the recovery of lock-on effect is caused by the domain quenching. The calculations agree with the experimental results, and the analysis also indicates that SI-GaAs PCSS is a photoactivated charge domain device.

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High Gain Lateral Semi-Insulating GaAs Photoconductive Switch Triggered by 1064 nm Laser Pulses

Shi¹,

Zhang²,

Li³

et al. 2002

Chinese Phys. Lett.

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Time-Dependent Analysis of High-Gain Triggering in Semi-insulating GaAs Photoconductive Switches

Cited by 7 publications

References 5 publications

Investigation of ultra‐wideband electromagnetic radiation based on SI‐GaAs photoconductive switches

Investigation of ultra‐wideband electromagnetic radiation based on SI‐GaAs photoconductive switches

Analysis of operation mechanism of semi-insulating GaAs photoconductive semiconductor switches

High Gain Lateral Semi-Insulating GaAs Photoconductive Switch Triggered by 1064 nm Laser Pulses

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