M. Auf der Maur, M. Povolotskyi, F. Sacconi, A. Di Carlo
In the last years GaN-based heterostructures have attracted much attention for their application as optoelectronic devices. The strain due to lattice mismatch of the constituent materials plays a crucial role in the behaviour of these structures, especially if they are of reduced dimensions, as e.g. nanocolumns. We show an implementation of a new device simulator which accounts for strain-related effects and quantum mechanical properties and couples them with the transport of the quasi-particles in the system…
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