Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

Каримов, А.; Karimova, D. A.

doi:10.1016/s1369-8001(03)00080-5

Cited by 11 publications

(3 citation statements)

References 9 publications

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“…Now and then, even social and economic rights are being included into the range of suable human rights. 122 2. Limiting the proper elements of "serious human rights violations" So there is a very broad range of human rights, which makes it difficult to clarify which human rights have to be violated to which extend to assume a serious violation.…”

Section: Provisions Of Current Human Rights Treatiesmentioning

confidence: 99%

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2016

IAPSS Politikon

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How does the Brazilian sugarcane sector act towards transnational private governance initiatives on biofuels? Brazil is one of the world's largest biofuel producers, and since the 1970s sugarcane ethanol production has expanded with the help of the federal government. The developed nations' rising demands for higher social and environmental standards have fostered the emergence of new governance mechanisms that affect biofuel-producing countries, which in turn have started to engage in private initiatives to regulate their economic activities through transnational certificates. This article aims to analyse the strategic interaction amongst Brazilian actors involved in biofuel production. Our goal is to explain: a) what are the conditions that have based the agents' ability to act in the international arena, and b) how they have influenced the international standards for biofuels. Building upon Büthe e Mattli's (2011) Institutional Complementarity Theory, as well as Caffagi e Pistor's (2013) normative concept of regulatory capability, we argue that a trend of geographical and economic concentration and homogeneity in Brazilian sugarcane production helped to create the conditions for Brazilian producers to adhere and influence the standards of Bonsucro (the most important private international regulation for sugarcane ethanol). Then, we suggest paths for further research on that issue, so that we can confirm these claims.

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Section: Provisions Of Current Human Rights Treatiesmentioning

confidence: 99%

Untitled

2016

IAPSS Politikon

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“…This allowed us to research in such structures the generation-recombination processes in the space charge regions after reach-through, as well as the influence of illumination on these processes. In these structures is found the internal photocurrent gain (Karimov & Karimova, 2003;Karimov & Yodgorova, 2010), which can not be associated with an avalanche or injection processes. Thus, this section is devoted to disclosing the mechanisms of charge transport and the nature of the internal photocurrent gain in multibarrier reach-through-photodiode structures.…”

Section: Introductionmentioning

confidence: 98%

Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

Каримов¹,

Yodgorova²,

Abdulkhaev³

2011

Photodiodes - World Activities in 2011

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“…The researches on use of laboratory samples of field phototransistors on a basis of arsenide gallium in photonics are spent. For registration of weak optical signals it is possible to use universal two-base and two-barrier photo diodes with internal amplification [2,3]. Their difference is, that at both polarities of inclusion the restriction of injection of carriers is carried out is realized lasing mechanism of formation of a working current.…”

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confidence: 99%

Optic-Electrical Switches on the Basis of Modernized Multifunctional Photodiode Structures

Aripov

Yodgorova

Каримов

et al. 2006

2006 2nd IEEE/IFIP International Conference in Central Asia on Internet

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Are given an example of the circuit of amplifiers where multifunctional doubleside-sensitive photodiode structure can be used for realization of detecting and amplification, and also optic-electronic switching of optical signals. Such system can be applied to the security and fire signal system, in systems of tracking behind optical objects, in optical fiber communication lines.Optic-electron device on a basis irradiator and receiver of optical signals are widely used for creation of various systems. Transfers of the optical information through optical fiber communication lines [1]. In them are used a spectral range from near infra-red 0.85 till 1.3-1.5 micron, in conformity in used by an optical fiber of the second or third generation. Here it is necessary to note, that depending on the used photoreceiver and its properties functionalities of electronic systems on their basis essentially change. By using of the bipolar transistor, probably to work with the large level of an optical signal and with smaller speed. For increase of speed of system of reception of the optical information began to practice use of field transistors together with the photo diode for optical fiber communication lines. The researches on use of laboratory samples of field phototransistors on a basis of arsenide gallium in photonics are spent. For registration of weak optical signals it is possible to use universal two-base and two-barrier photo diodes with internal amplification [2,3]. Their difference is, that at both polarities of inclusion the restriction of injection of carriers is carried out is realized lasing mechanism of formation of a working current. In one case the worker becomes locked p-n-junction, and in the another is n-m-junction. The consecutive connection of three and two transitions results in reduction of a return current, and also general capacity. In a mode of lockout metal-semiconduct transition the optical range is determined by prevalence of photosensitivity in short-wave area of a spectrum. In case of lockout p-n-junction mainly by spectral sensitivity homo-or heterotransition. And thus, by change of polarity of a working voltage the change of an optical working range is possible. Besides the presence of internal amplification promotes registration of optical signals since small activities.In the present work the results of research of multifunctional photdiode structures for registration and switching of weak optical signals are given at the expense of change of a working mode.The feature of the modernized multifunctional structures -high target resistance allows easily attach them with the electronic amplifier with an entrance element on the basis of the field transistor. In result the photo diode can register weak optical signals, since 15 lux. Other feature of multifunctional photodiode structures consists that the photocurrent in them occurs from an initial site and is increased proportionally to working voltage.Two-base three-barrier Au-nAl0,1Ga0,9As-pGaAs-Ag photodiode (m-n-p-m) due to high internal photoel...

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Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

Cited by 11 publications

References 9 publications

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Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

Optic-Electrical Switches on the Basis of Modernized Multifunctional Photodiode Structures

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