Three-dimensional nanostructure fabrication by focused-ion-beam chemical vapor deposition

Matsui, Shinji; Kaito, Takashi; Fujita, Jun–ichi; Komuro, Masanori; Kanda, Kazuhiro; Haruyama, Yuichi

doi:10.1116/1.1319689

Cited by 413 publications

(218 citation statements)

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“…Owing to its high flexibility regarding the shape and location of the deposits, IBID is becoming increasingly popular as a tool for prototyping threedimensional nanostructures [1,2]. So far, almost all IBID work is performed with Ga + focused ion beams (FIB), which have at best a probe size of 5 nm [3].…”

Section: Introductionmentioning

confidence: 99%

Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH 3 ) 3 Pt(C P CH 3 ) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current.Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions.

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Section: Introductionmentioning

confidence: 99%

Nanopillar growth by focused helium ion-beam-induced deposition

Chen

Veldhoven²,

Sanford

et al. 2010

Nanotechnology

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“…We have previously reported that amorphous carbon pillars grown by focused ion beam induced chemical vapor deposition (FIB-CVD) technique [17,18], containing a certain amount of Ga that comes from as the ion species, were turned into multi-walled graphite tubes when a biasing voltage was instantly applied [19]. Here, the distinctive feature of the transformed pillar was gallium droplets coexistence with the graphite partition inside the graphitized tube, and the outside of the tube still remained as an amorphous carbon.…”

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confidence: 99%

Graphitization at interface between amorphous carbon and liquid gallium for fabricating large area graphene sheets

Fujita

Ueki

Miyazawa

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have found that liquid gallium exhibits as a good graphitizing catalyst for a large area graphene sheet. While gallium and carbon are known to be an insoluble system, however, we have found that the catalytic reaction occurs at a very narrow interfacial region between amorphous carbon and liquid gallium. Amorphous carbon film was transformed into graphite layer composed of a few layers of graphene sheet. These thin graphene film can be easily transferred into silicon substrate through the intermediation of PDMS rubber stamping.

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“…Figure 1 shows our sample preparation method. First, we deposited an iron-doped amorphous carbon foundation, which was about 1 m thick, on a molybdenum grid for the transmission electron microscope (TEM) through focused-ion-beam-induced chemical vapor deposition [7] using a ferrocene (FeC 10 H 10 ) gas source [8] injected through a nozzle. Next, we grew amorphous carbon pillars, which were 10 -100 nm in diameter and 100 -500 nm long, on the iron-doped carbon foundation through electron-beam-induced chemical vapor deposition [9] in a phenanthrene (C 14 H 10 ) gas ambient [10].…”

mentioning

confidence: 99%