Third harmonic generation of spherical multilayered quantum dot: effects of quantum confinement, impurity, electric and magnetic fields

Kirak, M.; Yılmaz, Sait

doi:10.1007/s00339-022-05601-1

Cited by 15 publications

(3 citation statements)

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“…The analytical expression of the THG of spherical QDs can be obtained through using density matrix formalism and iterative methods. In our article, the THG coefficient relation takes the following form [ 31–33 ]

χ_{3 ω}^{false(3 false)} = \frac{e^{4} σ_{ν}}{ε_{0} {italicħ}^{3}} \frac{M_{01} M_{12} M_{23} M_{30}}{false(ω ‐ ω_{10} + i Γ_{10} false) false(ω ‐ ω_{20} + i Γ_{20} false) false(ω ‐ ω_{30} + i Γ_{30} false)}

where ω ij = ( E i − E j )/ ħ is transition frequency, σ v is the density of electrons in the QDs,

M_{i j} = | ⟨ ψ_{j} | z | ψ_{i} ⟩ |

is the off‐diagonal matrix, Γ ij denotes relaxation rate, and ε 0 is the vacuum permittivity.…”

Section: Theory Sectionmentioning

confidence: 99%

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Third Harmonic Generation in Al_0.3Ga_0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field

Zhang

2023

Physica Status Solidi (b)

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Herein, the nonlinear third harmonic generation (THG) distribution of Al0.3Ga0.7 As/GaAs quantum dots is studied under the combined influence of hydrostatic pressure and structural parameters, considering the presence of an electrostatic field and magnetic field. Hydrostatic pressure is introduced into the system as an environmental condition in the form of effective mass. When the hydrostatic pressure changes within a certain range, the peak shift and resonance peak of the THG coefficient change significantly, reflecting its application effect elegantly. Interestingly, the effects of these application modes on nonlinear optical properties have different effects, whether it is hydrostatic pressure, structural parameters, or electromagnetic fields.

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χ_{3 ω}^{false(3 false)} = \frac{e^{4} σ_{ν}}{ε_{0} {italicħ}^{3}} \frac{M_{01} M_{12} M_{23} M_{30}}{false(ω ‐ ω_{10} + i Γ_{10} false) false(ω ‐ ω_{20} + i Γ_{20} false) false(ω ‐ ω_{30} + i Γ_{30} false)}

where ω ij = ( E i − E j )/ ħ is transition frequency, σ v is the density of electrons in the QDs,

M_{i j} = | ⟨ ψ_{j} | z | ψ_{i} ⟩ |

is the off‐diagonal matrix, Γ ij denotes relaxation rate, and ε 0 is the vacuum permittivity.…”

Section: Theory Sectionmentioning

confidence: 99%

Section: Theory Sectionmentioning

confidence: 99%

Third Harmonic Generation in Al_0.3Ga_0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field

Zhang

2023

Physica Status Solidi (b)

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“…In consequence, studies on impurity doped low‐dimensional semiconductor nanostructures have been widely explored [ 2–16 ] with special thrust on their NLO properties. [ 17–41 ]…”

Section: Introductionmentioning

confidence: 99%

Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

Datta,

Bhakti,

Ghosh

2023

Physica Status Solidi (b)

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Present enquiry thoroughly explores the time‐average population transfer rate (TAPTR) of impurity doped GaAs quantum dot (QD) pursuing the change in the spatial impurity spread (SIS). The said excitation rate has been studied under the supervision of Gaussian white noise (GWN). The promotion of the ground state electronic density takes place due to different types of time‐changing fluctuations viz. simple sinusoidal field, time‐dependent confinement potential and time‐dependent magnetic field. GWN couples with the QD by additive and multiplicative modes. The work examines the joint influence of SIS, GWN and its pathway of inclusion and the nature of the time‐dependent perturbations on the attributes of the TAPTR. The TAPTR curves are composed of steadfast rise, steadfast diminish, maximization (relevant to generation of large nonlinear optical properties), minimization and saturation (suggesting dynamic freezing). The findings elucidate the means of fine‐tuning the TAPTR among the doped GaAs QD eigenstates in presence of noise, when the SIS undergoes a gradual change.This article is protected by copyright. All rights reserved.

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Harmonic generation of tuned quantum dots including impurity effects

et al. 2022

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Third harmonic generation of spherical multilayered quantum dot: effects of quantum confinement, impurity, electric and magnetic fields

Cited by 15 publications

References 59 publications

Third Harmonic Generation in Al_0.3Ga_0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field

Third Harmonic Generation in Al_0.3Ga_0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field

Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

Harmonic generation of tuned quantum dots including impurity effects

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Third harmonic generation of spherical multilayered quantum dot: effects of quantum confinement, impurity, electric and magnetic fields

Cited by 15 publications

References 59 publications

Third Harmonic Generation in Al0.3Ga0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field

Third Harmonic Generation in Al0.3Ga0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field

Role of Spatial Impurity Spread on the Transition Dynamics of Doped GaAs Quantum Dot in Presence of Noise

Harmonic generation of tuned quantum dots including impurity effects

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Product

Resources

About

Third Harmonic Generation in Al_0.3Ga_0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field

Third Harmonic Generation in Al_0.3Ga_0.7As/GaAs Quantum Dots: the Influence of the Structure Parameter, Static Electric, and Magnetic Field