Thin film pdin compound for integrated circuit metallization

Savitsky, E.M.; Polyakova, V. P.; Gorina, N. B.; Достанко, А. П.; Chistyakov, J. D.; Zelenkov, V. A.

doi:10.1007/bf02663276

Cited by 4 publications

(1 citation statement)

References 2 publications

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“…Compared to In or the few other metal indides in thermodynamic equilibrium with InP, PdIn is the best candidate for thermally stable contacts because of its high melting point (1285°C at its congruent melting temperature) 23 and low room temperature resistivity (12.6 µΩ-cm at the stoichiometric composition). 24 In contrast to the metal indides, there are many more metal phosphides in equilibrium with InP, although some of these phases are poor metals or are semiconductors. 25 In addition, some of these metal phosphides may be more difficult to process.…”

Section: Trends and Applicationsmentioning

confidence: 99%

Condensed phase equilibria in the metal-In-P systems

Mohney

1998

Journal of Elec Materi

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Ternary phase diagrams have proven valuable for understanding the reactions between a metal contact and a compound semiconductor, as well as for choosing thermally stable electrical contacts in thermodynamic equilibrium with the semiconductor. Since InP is important for both optoelectronic and electronic devices, the metal-In-P systems are of particular interest. In this work, new portions of isothermal sections of the (Rh, Ir, Ru, Os)-In-P diagrams are presented. Then, since no compilation of the published metal-In-P phase diagrams is available, the diagrams are reviewed here. The features of these diagrams are discussed in terms of the thermodynamics of the metal-In-P systems, particularly the considerable thermodynamic stability of many of the transition metal phosphides. Finally, some of the phases in thermodynamic equilibrium with InP, particularly PdIn and Ni 2 P, are highlighted for their potential for high-temperature contacts to InP.

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Section: Trends and Applicationsmentioning

confidence: 99%

Condensed phase equilibria in the metal-In-P systems

Mohney

1998

Journal of Elec Materi

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Agajanian¹

1979

Microelectronic Packaging

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PdIn contacts to n-type and p-type GaP

Lin

Ingerly

Chang

1996

Applied Physics Letters

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PdIn was used as a contact material to n-type and p-type GaP. On n-type GaP it forms a low resistance ohmic contact upon rapid thermal annealing. PdIn/n-GaP (S doped at 2–3 ×1018 cm−3) contacts annealed at 600 °C for 1 min had specific contact resistance’s lower than 1×10−4 Ω cm2. Unlike the contacts to n-GaP, PdIn contacts to p-GaP (Zn doped 1–2×1018 cm−3) show rectifying behavior at all annealing conditions. However, the effective Schottky barrier height seems to decrease significantly with thermal annealing. In addition to the electrical measurements, glancing angle x-ray diffraction was used to characterize the contacts. The glancing angle x-ray diffusion pattern of PdIn/n-GaP, annealed at 600 °C for 1 min, is consistent with the formation of an (InyGa1−y)P phase due to the thermal annealing. The ohmic behavior of the PdIn contacts to n-type GaP and the decrease in the contact’s Schottky barrier height on p-type GaP is attributed to the formation of this (InyGa1−y)P phase at the contact’s interface.

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Thin film pdin compound for integrated circuit metallization

Cited by 4 publications

References 2 publications

Condensed phase equilibria in the metal-In-P systems

Condensed phase equilibria in the metal-In-P systems

Interconnections

PdIn contacts to n-type and p-type GaP

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