Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O3 thin films

Kim, Seung Hyun; Woo, Hyun-Jung; Ha, Jowoong; Hwang, Cheol Seong; Kim, Hae Ryoung; Kingon, Angus I.

doi:10.1063/1.1370989

Cited by 24 publications

(12 citation statements)

References 23 publications

(6 reference statements)

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“…The thickness dependence of room temperature (a) longitudinal piezoelectric coefficient and (b) relative permittivity in polycrystalline morphotropic‐composition PZT , polycrystalline PL a ZT 12/50/50 and PL a ZT 12/30/70, polycrystalline PL a ZT 5/30/70, epitaxial morphotropic phase boundary PZT , and epitaxial PbZr 0.2 Ti 0.8 O 3 , 0.30BiScO 3 –0.70PbTiO 3 , and K 0.5 Na 0.5 NbO 3 thin films extracted from several independent experimental studies. Within each dataset the crystallographic texture and preparation procedures are consistent.…”

Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 96%

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

et al. 2016

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Ferroelectric materials are well‐suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro‐optic devices, and nonvolatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a noncentrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change in properties with decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, whereas in bulk ceramics, changes in properties from the values of large‐grained specimens is most notable in samples with grain sizes below several micrometers. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article, the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics is reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. In many cases, multiple mechanisms combine to produce the observed scaling effects.

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Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 96%

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

et al. 2016

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“…It was found that the latter decreases with decreasing thickness of PZT ferroelectric films. 23,24 This is usually explained by the presence of a thin layer of low dielectric constant at the electrode interfaces ͑the "dead layer"͒, leading to the series capacitor model suggested by Scott et al 25 Later on theories were developed to sustain the presence of the dead layer and thickness dependence of the dielectric constant. [26][27][28][29][30][31][32] Recently it was shown that thickness effects, such as the "smearing" of the ferroelectric transition and the thickness dependence of the dielectric constant and transition temperature, are not intrinsic phenomena in the case of BaTiO 3 ͑BTO͒, SrTiO 3 ͑STO͒, and ͑Ba 0.5 Sr 0.5 ͒TiO 3 ͑BST͒ singlecrystalline thin films.…”

Section: Introductionmentioning

confidence: 99%

Extrinsic contributions to the apparent thickness dependence of the dielectric constant in epitaxialPb(Zr,Ti)O3thin films

et al. 2007

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The problem of the thickness dependence of the dielectric constant, as well as the extrinsic contributions to its value, is analyzed for the case of epitaxial Pb͑Zr, Ti͒O 3 ͑PZT͒ thin films. It is shown that the frequency dependence of the measured capacitance is best simulated by an equivalent circuit incorporating the trapcontaining capacitance of a Schottky contact. The thickness dependence of the dielectric constant, calculated using the formula of a plane capacitor, appears to be an extrinsic effect due to the interface phenomena in the metal-ferroelectric-metal structure. The intrinsic dielectric constant of the PZT material seems to be thickness independent and of low value of about 30-40. This is closer to the values estimated from Raman measurements or from quantum theories of ferroelectricity. The thickness independence is also proven by piezoresponse force microscopy measurements. The presence of traps is evidenced by the presence of a photovoltaic effect at subgap wavelengths.

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“…One experiment result that may indirectly indicate the existence of the charged defects especially defect dipole complexes at the interface was that of the voltage shifts, i.e. the value of V c + – V c − in the polarization loops shown in the following figure, are all about 0.2 V nearly independent of the film thickness; then, we consider that defect dipole complexes may mostly be located at the interface with a similar concentration independence of the film thickness, as the concentration and the distribution of the charged defects in the films will determine the corresponding voltage shift value 30 …”

Section: Resultsmentioning

confidence: 90%

“…the value of V c 1 -V c À in the polarization loops shown in the following figure, are all about 0.2 V nearly independent of the film thickness; then, we consider that defect dipole complexes may mostly be located at the interface with a similar concentration independence of the film thickness, as the concentration and the distribution of the charged defects in the films will determine the corresponding voltage shift value. 30 The dependence of ferroelectric properties on the thickness of the BSPT films at room temperature was presented in Fig. 7.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Thickness Dependence of Structure and Electric Properties of Sol–Gel‐Derived BiScO₃–PbTiO₃Thin Films

Zhong

Wang

Fang

et al. 2010

Journal of the American Ceramic Society

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BiScO3–PbTiO3 (BSPT) thin films with the thickness from 80 to 800 nm were fabricated via a sol–gel method on Pt(111)/Ti/SiO2/Si(001) substrates, and the effects of thickness on the structure and properties of the sol–gel‐derived BSPT thin films were investigated. All the films with different thickness showed similar random orientation and similar grain size. The dependence of dielectric and ferroelectric properties on film thickness and temperature from room temperature to −190°C were investigated, and the results were explained by comparing our experiment data with the existing experimental and theoretical models. It is found that the interface between the electrode and the film has a twofold deleterious effect on permittivity: firstly, a passive layer exists, secondly this layer pins domain walls, and thus the larger dielectric response in thicker films and at higher temperatures come from the higher mobility of domain wall motion. Piezoelectric properties dependence of the BSPT films on thickness were also investigated, the effective piezoelectric constant d33* increased from 35 pm/V for the film of 80‐nm‐thick to 80 pm/V of 800‐nm‐thick film.

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Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O3 thin films

Abstract: Low-temperature growth of epitaxial LaNiO 3 / Pb(Zr 0.52 Ti 0.48 ) O 3 / LaNiO 3 on Si(001) by pulsed-laser deposition J.

Cited by 24 publications

References 23 publications

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Extrinsic contributions to the apparent thickness dependence of the dielectric constant in epitaxialPb(Zr,Ti)O3thin films

Investigation of Thickness Dependence of Structure and Electric Properties of Sol–Gel‐Derived BiScO₃–PbTiO₃Thin Films

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Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O3 thin films

Abstract: Low-temperature growth of epitaxial LaNiO 3 / Pb(Zr 0.52 Ti 0.48 ) O 3 / LaNiO 3 on Si(001) by pulsed-laser deposition J.

Cited by 24 publications

References 23 publications

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

Extrinsic contributions to the apparent thickness dependence of the dielectric constant in epitaxialPb(Zr,Ti)O3thin films

Investigation of Thickness Dependence of Structure and Electric Properties of Sol–Gel‐Derived BiScO3–PbTiO3Thin Films

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Investigation of Thickness Dependence of Structure and Electric Properties of Sol–Gel‐Derived BiScO₃–PbTiO₃Thin Films