Thickness dependent properties of CdS/CdTe hetero-photo-elements

Potlog, Tamara; Sites, James R.; Gashin, P.; Ghimpu, Lidia

doi:10.1109/smicnd.2002.1105836

Cited by 5 publications

(5 citation statements)

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“…According to our analysis, the optimum thickness of CdTe should be redesigned if the thickness of CdS layer or the incident intensity changed. The optimum thickness of CdTe would be thinner if the optical intensity enhanced, which is coincide with literature [5] records well. with thickness thickness of 100nm); K.Nakamura et al [6] studied the influence of CdS layer on cell parameters, and the experimental curve is shown in figure 8.…”

Section: The Influence Of Cds Thickness On Current Propertysupporting

confidence: 89%

“…Simulated results show that under the effect of optical absorption, bulk recombination and surface recombination, there exists an optimal thickness for the CdTe material. Experiments [5] of T.Potalog et al indicate that the current-voltage characteristic of CdTe cell can be influenced by CdTe thickness. The performance of the cells with deposition time in range of 2~5 min was studied, and the cells of highest efficiency and performance was found at the deposition time of 3.5 min.…”

Section: Photocurrent Propertymentioning

confidence: 99%

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The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell

Feng¹,

Chen²,

Li³

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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In this paper the photocurrent properties of the CdS/CdTe thin film solar cell were modeled by using relative physical models that were the incoherence model of the optical generation, the continuity equation for carriers and the current density equation. Then the effect of CdS and CdTe thickness on the photo current was simulated. The results of the simulation show that: a optimum CdTe thickness were exited for a max photo current and thinner CdS thickness would reduce the optimum CdTe thickness and be helpful for improving the cell performance and lowing the cell cost. IntroductionAt present the research of thin film photovoltaic cell is highly focus on high efficiency and low-cost solar cells. Polycrystalline CdS/CdTe thin film solar cell is one of the most important high efficiency and low-cost solar cells. The film thickness is one of key manufacturing parameters that affect the cell's cost and environmental protection properties. The open circuit voltage and short-circuit current, which are decisive factors of cell efficiency, are closely related to photocurrent. In this paper thin film solar cell were modeled by using relative physical models that were the incoherence model of the optical generation, the continuity equation for carriers and the current density equation. The relationship of CdS and CdTe thickness and the photo current was simulated, and the optimization of film thickness and related parameters was discussed.

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Section: The Influence Of Cds Thickness On Current Propertysupporting

confidence: 89%

Section: Photocurrent Propertymentioning

confidence: 99%

The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell

Feng¹,

Chen²,

Li³

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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“…The slight difference in the (ND-NA) associated with n-CdTe can be due to the substrate quality provided by the initial ZnS layers for the CdS and CdTe layers to grow with less defect. For both of the devices, the calculated values of the doping concentrations and the built-in potential are in line with the values of high-efficiency CdTebased devices (~1.0 × 10 14 to 5 × 10 15 ) cm -3 in the literature [3,53,54]. The effective density of states in the conduction band (Nc) was calculated to be ~7.92×10 17 cm -3 using equation 9where h is the Plank's constant, T is the temperature, k is the Boltzmann's constant and me * is the effective electron mass.…”

Section: Solar Cell Device Characterisationsupporting

confidence: 84%

The influence of ZnS crystallinity on all-electroplated ZnS/CdS/CdTe graded bandgap device properties

Ojo

Salim

Dharmadasa

2018

J Mater Sci: Mater Electron

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Electrodeposition of zinc sulphide (ZnS) was achieved from electrolytic bath containing zinc sulphate monohydrate (ZnSO4•H2O) and ammonium thiosulphate ((NH4)2S2O3) in a twoelectrode electroplating configuration. The cyclic voltammetric studies show that ZnS layers can be electroplated between (1350 and 1550) mV. The grown layers were characteristically explored for their structural, optical, morphological and electronic properties using X-ray diffraction (XRD) and Raman spectroscopy, UV-Visible spectrophotometry, scanning electron microscopy (SEM), photoelectrochemical (PEC) cell and DC conductivity measurements respectively. The structural analysis shows that crystalline ZnS can be deposited within a narrow cathodic deposition range between (1420 and 1430) mV. The UV-Visible spectrophotometry shows that the bandgap of both as-deposited and heat-treated ZnS films are in the range of ~(3.70 and 3.90) eV. The SEM shows small grains depicting the wetting property of ZnS. The PEC results show that the electroplated ZnS below 1425 mV is p-type and above 1425 mV is n-type under both as-deposited and heat treated condition. The DC conductivity shows that the highest resistivity is at the inversion growth voltage (Vi) for the ZnS layers. The glass/FTO/n-ZnS/n-CdS/n-CdTe/Au devices were fabricated using crystalline-ZnS and amorphous-ZnS buffer layers. The devices were explored using currentvoltage (I-V) and capacitance-voltage (C-V) techniques. As expected, devices fabricated with c-ZnS show improved device parameters (ideality factor n=1.60, depletion width W=1092 nm, open-circuit voltage Voc=730 mV, short-circuit current density Jsc=34.1 mAcm-2 , fill factor FF=0.57, conversion efficiency η=14.2%) when compared to device parameters (n=1.85, W=900 nm, Voc=720 mV, Jsc=29.9 mAcm-2 , FF=0.52, η=11.2%) of these devices fabricated with a-ZnS buffer layers.

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“…Therefore, this postannealing is a critical step in achieving high‐performance CdS/CdTe solar cells. On ex situ CdS/CdTe thick‐film solar cells, extensive research has been carried out in order to optimize the relevant parameters in the postannealing process including annealing time, temperature, gases, and dopant concentration . Direct application of this process to the in situ PLD fabricated CdS/CdTe thin‐film solar cell was found to yield devices with poor quality and reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Correlation of microscopic grain evolution in post‐CdCl ₂ annealing and performance of CdS/CdTe thin‐film solar cells fabricated using pulsed laser deposition

Zeng

Harrison

Kidman

et al. 2016

Physica Status Solidi (a)

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The effect of post annealing in CdCl2 was investigated to elucidate the correlation between the evolution of the microstructure of CdTe thin films with the annealing time and the performance of CdS/CdTe thin‐film solar cells made by in situ pulsed laser deposition (PLD). It has been found that the crystallinity of the annealed film is improved considerably as the CdTe polycrystalline grains evolved into grain clusters with a dendrite structure. While longer annealing time allows larger grain size, the increased film surface roughness outweighs the benefit of the improved crystallinity, resulting in increased structural disorders, such as pinholes. In fact, the concentration of the pinholes was found to increases monotonically with annealing time when it exceeds the optimal value, resulting in degradation of device performance and yield especially when pinholes appeared near the CdS/CdTe interface. This result illustrates the importance of controlling the microstructure of CdTe film and its interface with CdS to high‐performance CdTe/CdS thin‐film solar cells.

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Thickness dependent properties of CdS/CdTe hetero-photo-elements

Cited by 5 publications

References 0 publications

The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell

The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell

The influence of ZnS crystallinity on all-electroplated ZnS/CdS/CdTe graded bandgap device properties

Correlation of microscopic grain evolution in post‐CdCl ₂ annealing and performance of CdS/CdTe thin‐film solar cells fabricated using pulsed laser deposition

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Thickness dependent properties of CdS/CdTe hetero-photo-elements

Cited by 5 publications

References 0 publications

The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell

The simulation of photocurrent properties of the multi-layer thin film CdS/CdTe solar cell

The influence of ZnS crystallinity on all-electroplated ZnS/CdS/CdTe graded bandgap device properties

Correlation of microscopic grain evolution in post‐CdCl 2 annealing and performance of CdS/CdTe thin‐film solar cells fabricated using pulsed laser deposition

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Correlation of microscopic grain evolution in post‐CdCl ₂ annealing and performance of CdS/CdTe thin‐film solar cells fabricated using pulsed laser deposition