2001
DOI: 10.1007/978-3-662-04569-5
|View full text |Cite
|
Sign up to set email alerts
|

Thermoelectrics

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

12
561
2
3

Year Published

2005
2005
2020
2020

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 1,365 publications
(601 citation statements)
references
References 0 publications
12
561
2
3
Order By: Relevance
“…(Similar behavior was observed in device #2 and #3, as shown in Fig.S4 and S6 in the Supporting Information). This behavior of increasing thermopower with decreased conductance or carrier density tuned by gate is consistent with the typical behavior of semiconductors 20,31 and can be understood using Mott's formula for degenerate semiconductors 32 (1) where is the Fermi energy, k B is the Boltzmann constant and e is electron charge. In Eq.1, is positive and a monotonic function of V g (with increased V g , the electron density increases so that both the Fermi energy and conductance increases).…”
supporting
confidence: 80%
See 1 more Smart Citation
“…(Similar behavior was observed in device #2 and #3, as shown in Fig.S4 and S6 in the Supporting Information). This behavior of increasing thermopower with decreased conductance or carrier density tuned by gate is consistent with the typical behavior of semiconductors 20,31 and can be understood using Mott's formula for degenerate semiconductors 32 (1) where is the Fermi energy, k B is the Boltzmann constant and e is electron charge. In Eq.1, is positive and a monotonic function of V g (with increased V g , the electron density increases so that both the Fermi energy and conductance increases).…”
supporting
confidence: 80%
“…1 This conversion efficiency is described by one fundamental parameter, the thermoelectric figure of merit, which is defined as σ / ,where is the Seebeck coefficient or thermopower, σ is the electrical conductivity, is the absolute temperature, and is the thermal conductivity. The difficulty in obtaining better ZT values arises from the fact that S, σ , and are related to each other.…”
mentioning
confidence: 99%
“…n-type Bi 2 Te 2.7 Se 0.3 and p-type Bi 0.5 Sb 1.5 Te 3 ) are considered to be the most efficient materials for thermoelectric device application because of their superior ZT near room temperature. 1,11 These materials are therefore one of the best targets for the preparation of 1D nanostructures. A variety of approaches have been reported to prepare n-type Bi 2 Te 3 1D nanostructures, including templated electrodeposition using anodic alumina, [12][13][14][15][16] surfactant-mediated solvothermal techniques, 17,18 step edge selective electrodeposition, 19 high-temperature organic solution synthesis, 20 low-temperature and templatefree synthesis 21 and most recently the galvanic displacement reaction.…”
Section: Introductionmentioning
confidence: 99%
“…1 The crystal structure of the most common clathrate I type can be described as a three-dimensional host framework of four-connected, covalently bonded atoms (e.g., Ga, Si, Ge, Sn) forming 20-and 24-atom cages encapsulating electropositive atoms (e.g., Na, K, Rb, Cs, Sr, Ba, Eu). The interaction between cage atoms and the host framework is a key property for understanding the thermoelectric properties of these compounds.…”
Section: Introductionmentioning
confidence: 99%