2000
DOI: 10.1007/s11664-000-0117-1
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Thermoelectric quantum-dot superlattices with high ZT

Abstract: Letter L1

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Cited by 279 publications
(140 citation statements)
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References 18 publications
(18 reference statements)
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“…The state-of-the-art materials for thermoelectric cooling applications are alloys, it is necessary for the competing technologies based on Bi 2 Te 3 /Sb 2 Te 3 and Bi 2 Te 3 /Bi 2 Se 3 with ZT ¼ 1 and ZT ¼ 4, respectively [13,14]. Nanostructuring these thermoelectric materials has recently emerged as a successful strategy to gain factorial enhancements in ZT, unsettled to quantum and classical size effects of the charge and heat carriers, respectively [8,9,15,16]. Quantum confinement of charge carriers is believed to be due to an enhancement in the Seebeck coefficient (S) and electrical conductivity (s) owing to an increased density of states at the Fermi level [16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…The state-of-the-art materials for thermoelectric cooling applications are alloys, it is necessary for the competing technologies based on Bi 2 Te 3 /Sb 2 Te 3 and Bi 2 Te 3 /Bi 2 Se 3 with ZT ¼ 1 and ZT ¼ 4, respectively [13,14]. Nanostructuring these thermoelectric materials has recently emerged as a successful strategy to gain factorial enhancements in ZT, unsettled to quantum and classical size effects of the charge and heat carriers, respectively [8,9,15,16]. Quantum confinement of charge carriers is believed to be due to an enhancement in the Seebeck coefficient (S) and electrical conductivity (s) owing to an increased density of states at the Fermi level [16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…5) may be evidence that the formation of Te 0 and Bi x Te y was the preferred reaction in this region. The intermediate reduction wave extends from -0.02 mV to -0.12 mV involved the formation of Bi x Sb y Te 3 ternary alloys with stoichiometric (Bi 0.75 Sb 0.25 ) 2 Te 3 formed at -0.05 mV. The third reduction wave extends from -0.14 mV to -0.18 mV involved the formation of Sb-rich BiSbTe ternary alloys.…”
Section: Resultsmentioning
confidence: 99%
“…Various techniques have been used to synthesize nanostructured TE materials such as chemical vapour deposition (CVD) [2], molecular beam epitaxy (MBE) [3], vapor-liquid-solid (VLS) process [4], hydrothermal process [5] and electrodeposition [6]. Compared to other methods, electrodeposition is one of the most cost-effective techniques for the fabrication of nanostructured materials.…”
Section: Introductionmentioning
confidence: 99%
“…However experimental results with GaAs/AlGaAs QWIPs show that it is possible have lateral momentum non-conserved without affecting much the mobility of carriers moving above the barrier (see appendix). Controlled roughness of the superlattice interfaces during the growth or taking advantage of well designed quantum dot structures can create the required inhomogeneities [17]. The improvement in the effective power factor through thermionic emission can be combined with the other methods to reduce the phonon thermal conductivity in superlattices and thus obtain higher thermoelectric figure-ofmerit ZT [18][19][20].…”
Section: Resultsmentioning
confidence: 99%