Thermoelectric properties of nanocrystalline Bi3Se2Te thin films grown using pulsed laser deposition

Tuyen, Le Thi Cam; Le, Phuoc Huu; Luo, Chih-Wei; Leu, Jihperng

doi:10.1016/j.jallcom.2016.03.006

Cited by 19 publications

(12 citation statements)

References 41 publications

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“…It is noticed that, although both of the as-grown films exhibit highly c-axis preferred orientation of the Bi 2 Se 3 phase, a slight relative shift in diffraction angles indicative of modification of the c-axis parameter is observed. Indeed, by using the dominant Bi 2 Se 3 (006) and Bi 2 Se 3 (0015) peaks and the hexagonal unit cell relationship [32], the average c-axis lattice constant of the Bi 2 Se 3 thin films prepared using Bi 2 Se 3 and Bi 2 Se 5 targets were 28.39 Å and 28.25 Å, respectively, whose values were slightly smaller the c-axis lattice constant of 28.63 Å from the database of Bi 2 Se 3 powder (JCPDS PDF#33-0214). This could be due to the difference in the internal stress built up during the deposition.…”

Section: Structural and Morphological Propertiesmentioning

confidence: 99%

“…Because of the high volatility of selenium (Se), Bi 2 Se 3 tends to form Se vacancies or antisites that serve as donors to result in a sufficiently high carrier concentration and low carrier mobility [30,31]. When severe loss of Se-atoms occurs during the thin-film growth at elevated substrate temperatures, pure phase Bi 2 Se 3 film is usually not achieved, and the obtained films may present impurity phases or even turn into another phase [32]. Thus, to overcome this problem and obtain high-quality stoichiometric Bi 2 Se 3 thin-films, a Se-rich environment is necessary during films' growth.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition

et al. 2020

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In the present study, the structural, morphological, compositional, nanomechanical, and surface wetting properties of Bi2Se3 thin films prepared using a stoichiometric Bi2Se3 target and a Se-rich Bi2Se5 target are investigated. The Bi2Se3 films were grown on InP(111) substrates by using pulsed laser deposition. X-ray diffraction results revealed that all the as-grown thin films exhibited were highly c-axis-oriented Bi2Se3 phase with slight shift in diffraction angles, presumably due to slight stoichiometry changes. The energy dispersive X-ray spectroscopy analyses indicated that the Se-rich target gives rise to a nearly stoichiometric Bi2Se3 films, while the stoichiometric target only resulted in Se-deficient and Bi-rich films. Atomic force microscopy images showed that the films’ surfaces mainly consist of triangular pyramids with step-and-terrace structures with average roughness, Ra, being ~2.41 nm and ~1.65 nm for films grown with Bi2Se3 and Bi2Se5 targets, respectively. The hardness (Young’s modulus) of the Bi2Se3 thin films grown from the Bi2Se3 and Bi2Se5 targets were 5.4 GPa (110.2 GPa) and 10.3 GPa (186.5 GPa), respectively. The contact angle measurements of water droplets gave the results that the contact angle (surface energy) of the Bi2Se3 films obtained from the Bi2Se3 and Bi2Se5 targets were 80° (21.4 mJ/m2) and 110° (11.9 mJ/m2), respectively.

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Section: Structural and Morphological Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition

et al. 2020

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“…Bismuth chalcogenide compounds (Bi 2 Ch 3 , Ch = Se, Te) have been extensively investigated in material science and condensed-matter physics because of their intriguing properties regarding thermoelectricity [12][13][14] and three-dimensional TIs [15][16][17][18]. Bi 2 Ch 3 is a narrow bandgap semiconductor with a rhombohedral crystal structure belonging to the D 3d 5 ( R ¯ 3 m ) space group.…”

Section: Bismuth-based Topological Insulatorsmentioning

confidence: 99%

Ultrafast Dynamics in Topological Insulators

Le¹,

Luo²

2018

Two-Dimensional Materials for Photodetector

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Ultrafast dynamics of carriers and phonons in topological insulator Bi 2 Se 3, Cu x Bi 2 Se 3 (x = 0, 0.1, 0.125) single crystals were studied by time-resolved pump-probe spectroscopy. The coherent optical phonon (A 1g 1) is found via the damped oscillation in the transient reflectivity changes (∆R/R) for Cu x Bi 2 Se 3. The observed red shift of A 1g 1 phonon frequency suggests the intercalation of Cu atoms between a pair of the quintuple layers of Bi 2 Se 3 crystals. Moreover, the relaxation processes of Dirac fermion near the Dirac point of Bi 2 Se 3 are studied by optical pump and mid-infrared probe spectroscopy through analyzing the negative peak of the ∆R/R. The Dirac fermion-phonon coupling strength was found in the range of 0.08-0.19 and the strength is reduced as it gets closer to the Dirac point. The ultrafast dynamics and fundamental parameters revealed by time-resolved pump-probe spectroscopy are important for designing the optoelectronics in the mid-IR and THz ranges.

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“…Наилучшие результаты достигаются при температурах подложки в районе 300 • С и давлении защитных газов в диапазоне 0.1−1.0 Tорр [14][15][16][17]. Наблюдается большой разброс по наилучшим достигнутым свойствам термоэлектрических пленок двойных и тройных систем: сообщается о коэффициентах Зеебека от 100 до 220 мкВ/K и электрических факторах мощности от 1 до 35 мкВт/см • K [18][19][20][21].…”

Section: Introductionunclassified

Получение Тонких Пленок Теллурида Висмута На Полиимидных Подложках Методом Импульсного Лазерного Осаждения

Шупенев¹,

Коршунов²,

Григорьянц³

2020

Физика И Техника Полупроводников

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В настоящей работе сообщается об особенностях получения тонких термоэлектрических пленок p-Bi0.5Sb1.5Te3 и n-Bi2Te2.7Se0.3 с характерной толщиной ~300 нм на полиимидном материале методом импульсного лазерного осаждения. Рассмотрено влияние температуры роста, давления и расстояния между мишенью и подложкой на свойства пленок. Достигнуты высокие значения коэффициента Зеебека 220 и -200 мкВ/К, но факторы электрической мощности для пленок p- и n-типа составили 9.7 и 5.0 мкВт/см·K2 соответственно из-за достаточно высоких сопротивлений пленок. Ключевые слова: тонкие пленки, импульсное лазерное осаждение, термоэлектрический эффект, теллурид висмута, полиимид.

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Thermoelectric properties of nanocrystalline Bi3Se2Te thin films grown using pulsed laser deposition

Cited by 19 publications

References 41 publications

Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition

Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition

Ultrafast Dynamics in Topological Insulators

Получение Тонких Пленок Теллурида Висмута На Полиимидных Подложках Методом Импульсного Лазерного Осаждения

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