2014
DOI: 10.1088/0268-1242/29/6/064002
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Thermoelectric properties of BiOCu1−xMxSe (M = Cd and Zn)

Abstract: Doping of BiOCuSe at the copper site with divalent cadmium and zinc cations has been investigated. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained up to substitution levels of 10 and 5 at.% for Cd 2+ and Zn 2+ , respectively. Substitution of monovalent Cu + with divalent Cd 2+ or Zn 2+ leads to an increase in the magnitude of the electrical resistivity and the Seebeck coefficient. All synthesized materials behave as p-type semiconductors.

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Cited by 17 publications
(10 citation statements)
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“…Two factors may contribute to this result. Firstly, the Cu deficiencies can be serve as scattering centers to reduce the κ L by increasing the magnitude and frequency of the scattering event for heat‐carrying phonons . The other is the growth grain size for PBCSO samples (Figure B‐E) may increase the phonon mean free path and lead to the subtle increase of κ L .…”
Section: Resultsmentioning
confidence: 99%
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“…Two factors may contribute to this result. Firstly, the Cu deficiencies can be serve as scattering centers to reduce the κ L by increasing the magnitude and frequency of the scattering event for heat‐carrying phonons . The other is the growth grain size for PBCSO samples (Figure B‐E) may increase the phonon mean free path and lead to the subtle increase of κ L .…”
Section: Resultsmentioning
confidence: 99%
“…17,18 Moreover, pristine BiCuSeO exhibits an intrinsically low lattice thermal conductivity ~0.40 Wm/K at 923 K, which leads to a ZT value of 0.5 at the same temperature. 19 The ZT values had been improved by doping on Bi sites with alkali/alkali-earth or transition-metal elements, 18,[20][21][22][23] introducing Bi or Cu vacancies, 19,24,25 modulation doping, 26 dual-doping approach et al 27,28 As a result, the maximum ZT has been promoted up to 1.5 at 873 K for Bi 0.88 Ca 0.06 Pb 0.06 CuSeO compound. 27 Pb doping arouse significant optimization in transport properties among all the element-doping researches.…”
Section: Introductionmentioning
confidence: 99%
“…13 The layered oxychalcogenides (RO)TmCh (R ¼ La, Ce, Nd, Pr, Bi; Tm ¼ Cu, Ag; and Ch ¼ S, Se, Te) are the p-type semiconductors. The systems provide potential applications in thermoelectrics and optoelectronics 14 and are considered as the natural superlattice systems consisting of the insulating oxide and conducting chalcogenide layers. [15][16][17] The systems have (LaO)AgS-type crystal structure with the space group of P4/nmm (no.…”
Section: Introductionmentioning
confidence: 99%
“…Layered oxychalcogenides ( R O) TmCh ( R = La, Ce, Nd, Pr, Bi; Tm = Cu, Ag; and Ch = S, Se, Te) (space group: P 4/ nmm ) exhibit a p‐type semiconducting behavior, which is interesting for various applications, such as optoelectronics and thermoelectrics . For instance, (LaO)Cu Ch ( Ch = S, Se, Te) systems show a wide minimum band gap ( E g ) .…”
Section: Introductionmentioning
confidence: 99%