Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films

Banerjee, Arghya Narayan; Maity, R.; Ghosh, Priyanka; Chattopadhyay, Kalyan Kumar

doi:10.1016/j.tsf.2004.08.117

Cited by 127 publications

(70 citation statements)

References 25 publications

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“…Also, activation energy values were obtained from a temperature variation of the conductivity measurements of the individual films. These values were 550 meV and 270 meV for n-and p-layers, respectively, which were presented in our earlier literature [16,19] and also furnished in Table 1. Taking into consideration all of these values, the approximate depletion barrier height of the diode comes out to be ∼1.7 eV (as shown in Fig.…”

Section: Resultssupporting

confidence: 66%

“…3. Electrical properties of the individual layers have been studied in detail and represented in our previous literature [16][17][18][19][20]. A comparative study of different electrooptical properties of the individual films is furnished in Table-1.…”

Section: Resultsmentioning

confidence: 99%

“…And these excess oxygens can be introduced within the material by post-deposition annealing of the film in an oxygen atmosphere. In our previous work, we systematically studied the effect of excess oxygen on the electrical characteristics of p-CuAlO 2 films and reported an increase in the conducvity with an increase in the excess oxygen within the material [17,19]. Hence it can be argued that in our p-CuAlO 2 thin films, excess oxygen intercalation may give rise to some new and deep states within the bandgap via self-compensation [29], which reduces the effective bandgap of the material, so also the barrier height, and that is why our transparent heterojunction p-CuAlO 2 /n-ZnO: Al diodes show a low turn-on voltage.…”

Section: Resultsmentioning

confidence: 99%

“…A schematic flow-chart of the diode fabrication is furnished in Fig. 1 and details of the deposition conditions were also reported in our previous literature [17][18][19][20][21].…”

Section: Diode Fabricationmentioning

confidence: 99%

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Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Banerjee¹,

Chattopadhyay²

2008

Open Physics

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We report on the fabrication of all transparent heterojunction thin film diodes of the form glass/n-ZnO: Al/p-CuAlO2 produced by a combinatorial chemical and physical technique and on a study of their electro-optical properties. The n-ZnO: Al layer was deposited by a sol-gel-dip-coating process whereas the p-CuAlO2 layer was deposited by direct current sputtering techniques. The diode structure, with a total thickness of 1100 nm showed around 60% transmittance in the visible region. The current-voltage characteristics of the device showed a rectifying nature, with a low turn-on voltage around 0.8 V, having a rectification ratio > 50 at ± 2 V. The low turn-on voltage and moderate visible transmittance of the transparent diode indicate its potential application in the field of “Transparent” or “Invisible Electronics”.

show abstract

Section: Resultssupporting

confidence: 66%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…A schematic flow-chart of the diode fabrication is furnished in Fig. 1 and details of the deposition conditions were also reported in our previous literature [17][18][19][20][21].…”

Section: Diode Fabricationmentioning

confidence: 99%

See 2 more Smart Citations

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Banerjee¹,

Chattopadhyay²

2008

Open Physics

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“…Moreover, with regard to high temperature applications and the use of non-toxic elements in thermoelectric material, many recent researches have focused on oxide thermoelectric materials containing the TiO 2 system. 5,[21][22][23][24] Moreover, it is understood that the principal factor in the increase in the thermoelectric properties of oxide thermoelectric materials is the decrease in electrical resistivity.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Non-Stoichiometric Titanium Dioxide TiO<SUB>2−<I>x</I></SUB> Fabricated by Reduction Treatment Using Carbon Powder

Hirohashi

Sato

2006

Mater. Trans.

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A reduction treatment using carbon powder for reducing TiO 2 to fabricate non-stoichiometric titanium dioxide, TiO 2Àx , was proposed and performed. The carrier density and non-stoichiometric number were calculated by using thermogravimetry (TG) while heating and re-oxidizing TiO 2Àx in air. The thermoelectric properties of TiO 2Àx were measured and evaluated in air. The results show that TiO 2Àx can be simply and safely obtained by reducing insulating TiO 2 through the proposed reduction treatment. The carrier density increases and non-stoichiometric number decrease with the temperature of the reduction treatment and have a good correspondence with the decrease in the electrical resistivity of TiO 2Àx . Significantly improved thermoelectric properties were observed as a consequence of the decreasing electrical resistivity of TiO 2Àx .

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Effect of the CuAl₂O₄and CuAlO₂Phases in Catalytic Wet Air Oxidation of ETBE and TAME using CuO/γ‐Al₂O₃catalysts

et al. 2019

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This paper studies Cu/Al 2 O 3 catalysts, synthesized in two ways: copper deposit in the synthesis of alumina (sol gel) and incipient impregnation stabilized at 400 °C. The materials were characterized by X‐ray diffraction studies, nitrogen physisorption, temperature programmed reduction of H 2 , dehydration of isopropanol, scanning electronic microscopy, transmission electronic microscopy, which were evaluated in the liquid phase oxidation reaction of ethyl tert‐butyl ether and tert‐amyl methyl ether. The formation of CuAl 2 O 4 and CuAlO 2 in the samples synthesized by sol gel, led to a modification of the texture, thus resulting in an expansion of the specific area of the materials. CuAl 2 O 4 and CuAlO 2 have been identified by DRX from a content of 10 % Copper, the first showed the highest intensity with this technique. In the same way, these species favor the presence of Lewis acid sites; this is reflected in the materials with (Di‐isopropyl Ether) DIPE of 96.7 % and 91.1 % for the samples SAlCu5 and SAlCu15 respectively. The catalytic activity of the materials prepared by sol gel is in the function of the number of surface acid sites, the smaller particle size of the Cu and the surface of the contact, in the case of the ETBE meanwhile for TAME the activity was based mainly on the strength of the present acid sites. With impregnated materials, the activity is attributed to the smaller particle size of the Cu and the greater strength of the surface acid sites in the solid. The formation of spinel species inhibits the leaching phenomenon in the reaction milieu.

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Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films

Cited by 127 publications

References 25 publications

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Thermoelectric Properties of Non-Stoichiometric Titanium Dioxide TiO<SUB>2−<I>x</I></SUB> Fabricated by Reduction Treatment Using Carbon Powder

Effect of the CuAl₂O₄and CuAlO₂Phases in Catalytic Wet Air Oxidation of ETBE and TAME using CuO/γ‐Al₂O₃catalysts

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Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films

Cited by 127 publications

References 25 publications

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Thermoelectric Properties of Non-Stoichiometric Titanium Dioxide TiO<SUB>2&minus;<I>x</I></SUB> Fabricated by Reduction Treatment Using Carbon Powder

Effect of the CuAl2O4and CuAlO2Phases in Catalytic Wet Air Oxidation of ETBE and TAME using CuO/γ‐Al2O3catalysts

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Product

Resources

About

Thermoelectric Properties of Non-Stoichiometric Titanium Dioxide TiO<SUB>2−<I>x</I></SUB> Fabricated by Reduction Treatment Using Carbon Powder

Effect of the CuAl₂O₄and CuAlO₂Phases in Catalytic Wet Air Oxidation of ETBE and TAME using CuO/γ‐Al₂O₃catalysts