Thermoelectric characteristics of Sb2Te3 thin films formed via surfactant-assisted electrodeposition

Yoo, In Joon; Song, Youngsup; Lim, Dong Chan; Myung, Nosang V.; Lee, Kyu Hyoung; Oh, Minju; Lee, Dong−Yun; Kim, Jae Won; Kim, Seil; Choa, Yong Ho; Lee, Joo Yul; Lee, Kyu Hwan; Lim, Jae Hong

doi:10.1039/c3ta01631e

Cited by 48 publications

(21 citation statements)

References 27 publications

(23 reference statements)

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“…5a. For crystalline Sb 2 Te 3 thin films, the thermal conductivity displays very little change between 0.35 ± 0.035 W m −1 K −1 and W m −1 K −1 in the temperature range from 300 K to 540 K. In the case of amorphous Sb 2 Te 3 thin films, the thermal conductivity is about 0.23 ± 0.023 W m −1 K −1 when the temperature is below 450 K. Increasing the temperature from 450 K to 540 K increases the thermal conductivity from 0.25 ± 0.025 W m −1 K −1 to W m −1 K −1 , which can be regarded as a result of the phase transition from the amorphous to crystalline state and accord with the report in literature 50 . At 540 K, the thermal conductivity value is nearly equal to that of crystalline Sb 2 Te 3 thin films.…”

Section: Resultssupporting

confidence: 90%

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

Wei

Sun

et al. 2017

Sci Rep

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Sb2Te3 thin films are widely used in high density optical and electronic storage, high-resolution greyscale image recording, and laser thermal lithography. Thermal conductivity and its temperature dependence are critical factors that affect the application performance of thin films. This work aims to evaluate the temperature dependence of thermal conductivity of crystalline and amorphous Sb2Te3 thin films experimentally and theoretically, and explores into the corresponding mechanism of heat transport. For crystalline Sb2Te3 thin films, the thermal conductivity was found to be 0.35 ± 0.035 W m−1 K−1 and showed weak temperature dependence. The thermal conductivity of amorphous Sb2Te3 thin films at temperatures below ~450 K is about 0.23 ± 0.023 W m−1K−1, mainly arising from the lattice as the electronic contribution is negligible; at temperatures above 450 K, the thermal conductivity experiences an abrupt increase owing to the structural change from amorphous to crystalline state. The work can provide an important guide and reference to the real applications of Sb2Te3 thin films.

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Section: Resultssupporting

confidence: 90%

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

Wei

Sun

et al. 2017

Sci Rep

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“…Table 3 shows a comparison of the present work with previous studies for the last 7 years on Sb 2 Te 3 thin films. As can be observed, the thin film power factor obtained in this study was much better than the Te nanodots embedded electrodeposited Sb 2 Te 3 thin films 37 and easily comparable (if not better) to the nanoparticles incorporated Sb 2 Te 3 /Te multilayer thin films deposited by the expensive MBE technique 40 . Notably, the third parameter required for ZT calculations is thermal conductivity, which was not measured in this study.…”

Section: Structural and Thermoelectric Properties Of Thin Films Fabrisupporting

confidence: 66%

Optimizing the Structural, Electrical and Thermoelectric Properties of Antimony Telluride Thin Films Deposited on Aluminum Nitride-coated Stainless Steel Foil

Ahmed

Han

2020

Sci Rep

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in this study, we examined the thermoelectric (te) properties of co-evaporated p-type antimony telluride (Sb 2 te 3) thin films on aluminum nitride (AlN)-coated stainless steel foil substrates. We investigated the influence of composition and substrate temperature on the thin-film microstructure and transport properties, by varying the tellurium (Te) concentration in the thin films as well as the substrate temperature during deposition (room temperature (RT) and 300 °C). Thin films prepared with an RT substrate were further annealed at 264 °C to obtain crystallized thin films with high phase purity. Columnar thin films with large grains and a standard multi-oriented crystal structure were obtained when thin films were deposited on substrates heated to 300 °C. Thin films deposited at RT and subsequently annealed at 264 °C had a dense, layered microstructure, with a preferential c-axis or (00 l) texture as the compositions approached phase stoichiometry. The temperature dependence of the thermoelectric properties was measured, and variations were interpreted in terms of the deviation from stoichiometry and the obtained microstructure. A maximum power factor (PF) of 0.87 mW/m • K 2 was obtained for off-stoichiometric 65.0 at% Te thin film, which was the highest among the samples deposited at high substrate temperatures. A higher PF of 1.0 mW/m • K 2 was found for off-stoichiometric thin films with 64.5 at% Te, which was deposited at RT and subsequently annealed. The improvement of thermoelectric power in films containing excess Te could be related to energy dependent carrier scattering at the Sb 2 te 3 /Te interface.

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“…Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology [1][2][3][4][5][6][7][8][9][10]. The TE materials can be formed either as thin films [1][2][3][4][5][6][7] or as bulk [9][10][11][12][13] semiconductors.…”

Section: Introductionmentioning

confidence: 99%

“…From a material point of view, oxide semiconductors have attracted much attention due to their lower toxicities and lower prices compared to Te compounds, which are widely used and studied TE materials [2,3]. In 2 O 3 based and ZnO based oxides have been extensively investigated as the transparent conductive oxide for their high electrical conductivity (~3 × 10 −4 Ω•cm), high transmittance (over 80%), and remarkable thermal stability at high temperature [17,18].…”

Section: Introductionmentioning

confidence: 99%

Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

Kim

Byeon

et al. 2018

Coatings

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It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (μ) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In−Zn−O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was estimated to have poor κ and high electrical conductivity compared to crystalline In2O3:Sn (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in transparent display devices.

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Thermoelectric characteristics of Sb2Te3 thin films formed via surfactant-assisted electrodeposition

Cited by 48 publications

References 27 publications

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

Optimizing the Structural, Electrical and Thermoelectric Properties of Antimony Telluride Thin Films Deposited on Aluminum Nitride-coated Stainless Steel Foil

Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

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