Thermodynamic spin magnetization of strongly correlated two-dimensional electrons in a silicon inversion layer

Prus, O.; Yaish, Yuval; Резников, М.; Sivan, Uri; Pudalov, V. M.

doi:10.1103/physrevb.67.205407

Cited by 101 publications

(188 citation statements)

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“…In the highly interacting, dilute regime (r s > ∼ 3), χ * and m * are typically enhanced compared to the band values and increase with increasing r s , as confirmed both theoretically [1][2][3][4][5][6][7][8] and experimentally. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Besides r s , the spin and/or valley degrees of freedom also play an important role in the re-normalization of m * and χ * since they modify the exchange interaction. 5,6,17,[24][25][26][27] In particular, it was recently demonstrated that when a 2D electron system is fully spin and valley polarized, m * is suppressed compared to its band value.…”

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confidence: 99%

Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs

et al. 2011

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We report effective hole mass (m * ) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density p ∼ 7 × 10 10 cm −2 , rs ∼ 6) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose m * we measure to be ∼ 0.2 (in units of the free electron mass). Despite the relatively large rs in our 2D system, the measured m * is in reasonably good agreement with the results of our energy band calculations which do not take interactions into account. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and measure m * for the populated subband. We find that this latter m * is close to the m * we measure in the absence of the parallel field. We also deduce the spin susceptibility of the 2D hole system from the depopulation field, and conclude that the susceptibility is enhanced by about 50% relative to the value expected from the band calculations.

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confidence: 99%

Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs

et al. 2011

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“…2, 12, and 13 The electron density where we find spin polarization in the wire is roughly equal to what has been determined experimentally in GaAs/ AlGaAs. 12,13 Direct measurements of the magnetization of the 2DEG in Si-SiO 2 heterostructures suggests an increased spin susceptibility 18,19 close to the MIT but it is not clear in these experiments whether a spin polarized phase, as we find, exists.…”

Section: Discussionmentioning

confidence: 38%

“…By modulating an in-plane magnetic field and measuring the minute current between gate and 2DEG the thermodynamic magnetization of the 2DEG is found through Maxwell's equations. 18,19 Both Prus et al 18 and Shaskin et al 19 find that the spin susceptibility is critically enhanced prior to the metal-insulator transition in the 2DEG. It is, however, not clear from the experiment whether a spin polarized phase actually exists between the metal and insulating phase or if there is only an increased magnetization in the metallic phase.…”

Section: Resultsmentioning

confidence: 99%

“…18 and 19 for Si-SiO 2 heterostructure 2DEGs. By modulating an in-plane magnetic field and measuring the minute current between gate and 2DEG the thermodynamic magnetization of the 2DEG is found through Maxwell's equations.…”

Section: Resultsmentioning

confidence: 99%

“…[14][15][16][17] The MIT causes a localization of the electron gas with an accompanying abrupt change in the conductance. 15,16 Recent measurements of the thermodynamic magnetization in silicon 2DEGs 18,19 found an enhancement of the spin susceptibility close to n c . Interestingly, theoretical considerations 6,20 indicate that the spinsusceptibility in a disordered potential increases for electron densities close to n c .…”

Section: Introductionmentioning

confidence: 99%

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Spin polarization in modulation-dopedGaAsquantum wires

2008

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We study spin polarization in a split-gate quantum wire focusing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin density approximation. We find that depending on the electron density, the spin polarization exhibits qualitatively different features. For the case of relatively high electron density, when the Fermi energy E F exceeds a characteristic strength of a long-range impurity potential V donors , the density spin polarization inside the wire is practically negligible and the wire conductance is spin-degenerate. When the density is decreased such that E F approaches V donors , the electron density and conductance quickly become spin polarized. With further decrease of the density the electrons are trapped inside the lakes ͑droplets͒ formed by the impurity potential and the wire conductance approaches the pinch-off regime. We discuss the limitations of the density functional theory in the local spin density approximation in this regime and compare the obtained results with available experimental data.

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On the Electron-Electron Interactions in Two Dimensions

Pudalov

Gershenson

Kojima

NATO Science Series II: Mathematics, Physics and Chemistry

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In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system.Comment: Added refs; corrected typos. 19 pages, 7 figures. To be published in: Chapter 19, Proceedings of the EURESCO conference "Fundamental Problems of Mesoscopic Physics ", Granada, 200

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Thermodynamic spin magnetization of strongly correlated two-dimensional electrons in a silicon inversion layer

Cited by 101 publications

References 30 publications

Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs

Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs

Spin polarization in modulation-dopedGaAsquantum wires

On the Electron-Electron Interactions in Two Dimensions

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