Crystal phase engineering gives access to new types of
periodic
nanostructures, such as the so-called twinning superlattices, where
the motif of the superlattice is determined by a periodic rotation
of the crystal. Here, by means of atomistic nonequilibrium molecular
dynamics calculations, we study to what extent these periodic systems
can be used to alter phonon transport in a controlled way, similar
to what has been predicted and observed in conventional superlattices
based on heterointerfaces. We focus on twinning superlattices in GaAs
and InAs and highlight the existence of two different transport regimes:
in one, each interface behaves like an independent scatterer; in the
other, a segment with a sufficiently large number of closely spaced
interfaces is seen by propagating phonons as a metamaterial with its
own thermal properties. In this second scenario, we distinguish the
case where the phonon mean free path is smaller or larger than the
superlattice segment, pointing out a different dependence of the thermal
resistance with the number of interfaces.