Thermal stress mitigation by Active Thermal Control: Architectures, models and specific hardware

Soldati, Alessandro; Dossena, Fabrizio; Pietrini, Giorgio; Barater, Davide; Concari, Carlo; Iannuzzo, Francesco

doi:10.1109/ecce.2017.8096674

Cited by 15 publications

(5 citation statements)

References 12 publications

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“…Experimental data showing the closed loop limitation of the junction temperature have been presented. However thanks to the high level of dynamic of the proposed method, it is possible to implement more sophisticated techniques like the one presented in [16] - [18], that actively reduce the temperature swing of the component and permits to extend the lifetime of the semiconductor.…”

Section: Active Thermal Controlmentioning

confidence: 99%

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Stella

Pellegrino

Armando

et al. 2018

IEEE Trans. on Ind. Applicat.

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Section: Active Thermal Controlmentioning

confidence: 99%

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Stella

Pellegrino

Armando

et al. 2018

IEEE Trans. on Ind. Applicat.

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“…‚ Improving the reliability of operation close to thermal restrictions ‚ Achieving a more reasonable difference between the maximum junction temperature throughout the operation and the nominal junction temperature ‚ Enhancing the operation performance during transient at thermal restrictions Decrease in thermal cycle Manipulation in terms of the following: -Switching power loss: • Gate resistance ( [210], [223], [224]), • Frequency ( [27], [28], [45], [46], [216], [210], [225], [226], [227], [228], [229]), • Gate drivers ( [32], [230], [222], [231], [232], [233], [234], [235]), • Shoot-through duty ratio ( [233]).…”

Section: E Cost Analysismentioning

confidence: 99%

Power Converters Coolant: Past, Present, Future, and a Path Toward Active Thermal Control in Electrified Ship Power Systems

Moghassemi,

Rahman,

Ozkan

et al. 2023

IEEE Access

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Power converters have widespread applications in automotive, renewables, and power systems. The demand for power modules with low power consumption and high efficiency has increased due to advancements in semiconductor devices. So, power converters need to be highly efficient to reduce costs associated with energy dissipation and cooling requirements. This paper discusses various active thermal control methods for high-power power converters. It covers modulation and configuration techniques, ranging from single configurations to cascaded, modular, and multilevel converters. These concepts form the basis of power electronics building blocks, particularly relevant in all-electric ship systems. Power electronics building blocks represent a This article has been accepted for publication in IEEE Access.

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“…In fact, the choice of a specific chip carrier (package) imposes a limit on the maximum power loss that can be dissipated by the device (P max ). Consequently, the conduction loss must be lower than the fraction (1 − r)P max , where r is the loss distribution coefficient (LDC), describing the ratio between switching power loss and total device loss [10]:…”

Section: On-state Drain-source Voltage As a Tsepmentioning

confidence: 99%

In-place Characterization of On-state Voltage for SiC MOSFETs: Controlled Shoot-through vs. Film Heater

Soldati¹,

Dalboni²,

Menozzi³

et al. 2021

Preprint

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The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.

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Thermal stress mitigation by Active Thermal Control: Architectures, models and specific hardware

Cited by 15 publications

References 12 publications

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Power Converters Coolant: Past, Present, Future, and a Path Toward Active Thermal Control in Electrified Ship Power Systems

In-place Characterization of On-state Voltage for SiC MOSFETs: Controlled Shoot-through vs. Film Heater

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