Thermal stability of thermoelectric CoSb3 skutterudite thin films

Daniel, M.; Friedemann, Marvin; Franke, Joern-Holger; Albrecht, Manfred

doi:10.1016/j.tsf.2015.05.024

Cited by 15 publications

(10 citation statements)

References 22 publications

(26 reference statements)

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“…A unique process termed electrochemical deposition (ED) provides an attractive alternative route in comparison to other techniques [16][17][18][19][20] for the fabrication of high-quality CoSb 3 lms with tailored microstructure and promising thermoelectric properties. The most interesting feature of ED is that, the composition and crystalline structure of the deposited material can be controlled by adjusting the ED parameters such as pH, bath temperature, deposition potential etc.…”

Section: 5mentioning

confidence: 99%

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Yadav

Chaudhary

et al. 2017

RSC Adv.

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In this study, the deposition potential has been used to exercise control on structural and electrical properties, and associated tuning of thermoelectric properties of CoSb 3 thin films prepared by electrochemical synthesis. Deposition potential is observed to have a strong effect on the stoichiometry of films and orientation of crystallites, and consequently on the physical properties. X-ray diffraction patterns reveal that the films grown at lower deposition potentials (#À0.9 V) have (013) preferred orientation whereas (420) orientation is observed at higher negative deposition potentials. A correlation of the deposition potential controlled composition from a Sb-rich to a Co-rich regime and the resulting tuning of electrical transport parameters and thermoelectric properties of the CoSb 3 thin films is established. With enlarged crystallites and enhanced textured structure at a deposition potential of À0.97 V, a significantly large Seebeck coefficient (58 mV K À1) with a simultaneously large electrical conductivity (2.1 Â 10 3 U À1 cm À1) are achieved as a result of the high mobility (60 cm 2 V À1 s À1). A high value for room temperature power factor (706 AE 9 mW K À2 m À1) observed in the as-grown CoSb 3 thin films without any further post-deposition annealing makes their synthesis and thermoelectric studies interesting for their potential applications in power generation and refrigeration.

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Section: 5mentioning

confidence: 99%

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Yadav

Chaudhary

et al. 2017

RSC Adv.

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“…Many conventional thermoelectric materials including alloys based on BiSbTe [13,14], PbTe [15,16], PbSe [17], skutterudite (based-on CoSb 3 ) [18], clathrate [19], Zintl [20] and half-Heusler alloys [21][22][23][24][25][26][27][28][29][30] are reported in the literature. Among these materials, recent works showed that Mg 2 X (X = Si, Sn, Ge) materials are potential interesting candidates as n-or p-type thermoelectric semiconductors at mid-temperature (500-800 K), depending on the nature of X [23][24][25][26][27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

et al. 2018

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Mg–Si thin films (23 ≤ at.% Si ≤ 43) were deposited by co-sputtering of Mg and Si targets in an argon atmosphere. Two groups of samples were prepared with respect to sputtering parameters. The first Group I was synthesized while residual pressure in the reactor was lower than 7 × 10−4 Pa and the second Group II when reactor was pumped down to pressure higher than 7 × 10−4 Pa. The Mg2Si phase appeared for all as-deposited films of Group I around the stoichiometric composition region (29 ≤ at.% Si ≤ 37) and in the Mg-rich region (at.% Si < 29) the Mg2Si and Mg phases coexisted. An amorphous structure was obtained for all as-deposited films of Group II no matter their composition (34 ≤ at.% Si ≤ 38) and the Mg2Si structure was achieved after post annealing under air at temperature ≥140 °C. Thermal stability of Mg2Si thin films was investigated by annealing treatments under air. Superficial Mg2Si structural decomposition began at T > 500 °C and layer morphology and structure damaged while annealing temperature increased up to 700 °C. The films’ electrical resistivity, free carrier concentration and mobility as well as Seebeck coefficient were measured and thermoelectric power factors were discussed vs. composition.

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“…Binary Co–Sb thin films with a thickness of 30 nm were co‐deposited by MBE on SiO 2 (100 nm)/Si(100) substrates at room temperature and were afterwards annealed for one hour in ultra‐high vacuum at various temperatures up to 650 °C . Stoichiometry was accurately controlled by RBS .…”

Section: Methodsmentioning

confidence: 99%

“…(i) In the first study on binary Co–Sb thin films the chemical composition and the thickness of the as‐deposited and annealed films were determined by Rutherford backscattering spectrometry. X‐ray diffraction revealed the formation of the skutterudite phase without any secondary phase in a rather broad composition range between 75 and 82 at.% of Sb, for annealing temperatures between 200 and 600 °C.…”

Section: Synthesis and Thermoelectric Properties Of Nanomaterialsmentioning

confidence: 99%

From thermoelectric bulk to nanomaterials: Current progress for Bi₂Te₃ and CoSb₃

Peranio

Eibl

Bäßler

et al. 2015

Physica Status Solidi (a)

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Bi2Te3 and CoSb3 based nanomaterials were synthesized and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT‐limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single‐crystalline, ternary p‐type Bi15Sb29Te56, and n‐type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulk materials were prepared by potential‐pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p‐type Sb2Te3, n‐type Bi2Te3, and n‐type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. This yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p‐type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X‐ray diffraction, nuclear resonance scattering, inelastic neutron scattering, Mössbauer spectroscopy, and transmission electron microscopy. For Bi2Te3 materials, ab‐initio calculations together with equilibrium and non‐equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoretical modeling were combined to assess and reduce ZT‐limiting mechanisms in these materials.

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Thermal stability of thermoelectric CoSb3 skutterudite thin films

Cited by 15 publications

References 22 publications

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

From thermoelectric bulk to nanomaterials: Current progress for Bi₂Te₃ and CoSb₃

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Thermal stability of thermoelectric CoSb3 skutterudite thin films

Cited by 15 publications

References 22 publications

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb3 thin films

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb3 thin films

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

From thermoelectric bulk to nanomaterials: Current progress for Bi2Te3 and CoSb3

Contact Info

Product

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Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

From thermoelectric bulk to nanomaterials: Current progress for Bi₂Te₃ and CoSb₃