IEEE Electron Device Lett.
 2006
DOI: 10.1109/led.2005.863563
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Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices

Chin-Lung Cheng
1
,
Kuei‐Shu Chang‐Liao
2
,
Tzu-Chen Wang
3
et al.
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Cited by 12 publications
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References 17 publications
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Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

Baunemann
1
,
Winter
2
,
Csapek
3
et al. 2006
Eur J Inorg Chem
21
3
20
0
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Mixed Amido/Imido/Guanidinato Complexes of Tantalum: Effects of Ligand Substitution on Thermal Properties

Baunemann
1
,
Winter
2
,
Csapek
3
et al. 2006
Eur J Inorg Chem
21
3
20
0
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Compatibility of HfxTayN metal gate electrode with HfOxNy gate dielectric for advanced CMOS technology

Chang‐Liao
1
,
Chang
2
,
Sahu
3
et al. 2006
Microelectronic Engineering
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0
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Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications

Yang
1
,
Chang‐Liao
2
,
Chang
3
et al. 2007
Microelectronic Engineering
3
0
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0
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