Thermal stability and partial dewetting of crystalline organic thin films: 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111)

Krause, B.; Dürr, Arndt C.; Schreiber, Frank; Dosch, H.; Seeck, O. H.

doi:10.1063/1.1589471

Cited by 77 publications

(52 citation statements)

References 21 publications

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“…The experimental distances between the carbon rings of the molecules and the surface atoms are 2.86Å and 3.27Å for adsorption on Ag (111) and Au(111), respectively. 53,99 Experiments indicate a weak interaction between PTCDA and Au(111), consistent with physisorption, 48,98 and a somewhat stronger interaction between PTCDA and Ag (111). 47,48,49,50,51 PTCDA binds more strongly to open Ag surfaces and to surface steps.…”

Section: Ptcdamentioning

confidence: 70%

First-principles study of the dipole layer formation at metal-organic interfaces

et al. 2010

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We study the dipole layer formed at metal-organic interfaces by means of first-principles calculations. Interface dipoles are monitored by calculating the work function change of Au, Ag, Al, Mg and Ca surfaces upon adsorption of a monolayer of PTCDA (3,4,9,10-perylene-tetra-carboxylic-dianhydride), perylene or benzene molecules. Adsorption of PTCDA leads to pinning of the work function for a range of metal substrates. It gives interface dipoles that compensate for the difference in the clean metal work functions, leading to a nearly constant work function. In contrast, adsorption of benzene always results in a decrease of the work function, which is relatively constant for all metal substrates. Both effects are found in perylene, where adsorption on low work function metals gives work function pinning, whereas adsorption on high work function metals gives work function lowering. The work function changes upon adsorption are analyzed and interpreted in terms of two competing effects. If the molecule and substrate interact weakly, the molecule pushes electrons into the surface, which lowers the work function. If the metal work function is sufficiently low with respect to the unoccupied states of the molecule, electrons are donated into these states, which increases the binding and the work function.

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Section: Ptcdamentioning

confidence: 70%

First-principles study of the dipole layer formation at metal-organic interfaces

et al. 2010

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“…6 summarizes the parameters used for the simulations. For T 358 K, the lattice parameter varies as expected from the thermal expansion of PTCDA in (102) direction [16]. For T 358 K, the effective lattice parameter seems to be approximately temperature independent instead of decreasing further.…”

Section: B Modelling Of the Rod Measurementsmentioning

confidence: 86%

“…A detailed study of the epitaxy and the post-growth morphology of the PTCDA films studied here has been published elsewhere [2,15,16,17]. In this paper, we focus on the results of specular intensity measurements (with the momentum transfer q = q z e z perpendicular to the sample surface) during and directly after the growth of thin PTCDA films.…”

Section: Introductionmentioning

confidence: 99%

Late growth stages and post-growth diffusion in organic epitaxy: PTCDA on Ag(111)

et al. 2004

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The late growth stages and the post-growth diffusion of crystalline organic thin films have been investigated for 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on Ag(111), a model system in organic epitaxy. In situ x-ray measurements at the anti-Bragg point during the growth show intensity oscillations followed by a time-independent intensity which is independent of the growth temperature. At T 350 K, the intensity increases after growth up to a temperature-dependent saturation value due to a post-growth diffusion process. The time-independent intensity and the subsequent intensity recovery have been reproduced by models based on the morphology change as a function of the growth temperature. The morphology found after the post-growth diffusion processes has been studied by specular rod measurements.

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“…Several research groups have used PTCDA, a parylene derivative-based red dye as a model system for studying the molecular beam deposition [430][431][432][433][434][435][436][437][438][439]. Although the bulk has layered molecular planes, even films grown on SiO 2 and many other substrates are similar.…”

Section: Os Epitaxymentioning

confidence: 99%

“…In contrast, higher-temperature films exhibited better crystallinity, but with a tendency toward island growth leading to surface roughness. Epitaxial growth of PTCDA was carried out [431,[436][437][438] on Ag(111) with a herringbone structure of the flat-lying molecules with a vertical PTCDA-Ag spacing of 0.285 ± 0.01 nm [439], whereas the growth extending beyond a monolayer resulted in a complex azimuthal distribution as a function of temperature. The comparison of PTCDA on Au(111) showed a similar behavior [432,434,441], although the epitaxy details differed considerably.…”

Section: Os Epitaxymentioning

confidence: 99%

Organic semiconductors for device applications: current trends and future prospects

Ahmad

2014

Journal of Polymer Engineering

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Abstract:With the rich experience of developing silicon devices over a period of the last six decades, it is easy to assess the suitability of a new material for device applications by examining charge carrier injection, transport, and extraction across a practically realizable architecture; surface passivation; and packaging and reliability issues besides the feasibility of preparing mechanically robust wafer/substrate of single-crystal or polycrystalline/ amorphous thin films. For material preparation, parameters such as purification of constituent materials, crystal growth, and thin-film deposition with minimum defects/ disorders are equally important. Further, it is relevant to know whether conventional semiconductor processes, already known, would be useable directly or would require completely new technologies. Having found a likely candidate after such a screening, it would be necessary to identify a specific area of application against an existing list of materials available with special reference to cost reduction considerations in large-scale production. Various families of organic semiconductors are reviewed here, especially with the objective of using them in niche areas of large-area electronic displays, flexible organic electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve mobility and stability by adjusting π-conjugation and modifying the energy bandgap. Higher conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and metal nanoparticles, open exciting methods of designing flexible contact/interconnects for organic and flexible electronics as can be seen from the discussion included here.

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Thermal stability and partial dewetting of crystalline organic thin films: 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111)

Cited by 77 publications

References 21 publications

First-principles study of the dipole layer formation at metal-organic interfaces

First-principles study of the dipole layer formation at metal-organic interfaces

Late growth stages and post-growth diffusion in organic epitaxy: PTCDA on Ag(111)

Organic semiconductors for device applications: current trends and future prospects

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