Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

Dornberger, E.; Tomzig, E.; Seidl, A.; Schmitt, Sven; Leister, H.-J.; Schmitt, C.; Müller, G.

doi:10.1016/s0022-0248(97)00241-8

Cited by 70 publications

(27 citation statements)

References 9 publications

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“…20% to 30% higher directly at the interface than at a distance of a few centimeters away from the phase boundary [38,43]. This means that the actual G values are most likely higher than the G values given in Table III.…”

Section: Discussionmentioning

confidence: 99%

Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

2013

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This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped (> 10 20 atoms/cm 3 ) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the eect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.

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Section: Discussionmentioning

confidence: 99%

Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

2013

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“…These numerical simulations were carried out with the commercial FEM code FIDAP TM [3]. Usually, it is necessary to make some assumptions and simplifications for efficient calculations of global temperature fields [4][5][6][7][8][9]. The rather high Rayleigh number within the inert gas indicates a high level of convection.…”

Section: Numerical Modelsmentioning

confidence: 99%

Numerical modeling and investigation of liquid phase epitaxy of Hg_1–xCd_xTe infrared detectors

Lin

Dold

Figgemeier

2005

Cryst. Res. Technol.

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Numerical investigations have been performed for modeling the global temperature field of an industrial liquid phase epitaxy (LPE) facility and to estimate the temperature fluctuations in a Te-rich solution during the LPE growth. The numerical results agreed well with experimental data and therefore provide reliable reference points for experimenters for further improvements of the growth conditions.

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“…[16]). This is somewhat surprising as global thermal modeling has become an indispensable tool in industry since several years for developing and optimizing for example crystal growth equipment and processes [17][18][19][20]. Global thermal modeling offers the possibility to change the configuration of the experimental set-up, process parameters and physical properties on a very quick and simple basis.…”

Section: Global Thermal Modeling As a Standard Tool In Industrymentioning

confidence: 99%

Numerical modeling of crystal growth and solidification experiments carried out under microgravity conditions

Friеdrich¹,

Dagner

Hainke

et al. 2003

Cryst. Res. Technol.

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In this paper first examples for global thermal modeling of microgravity experiments in the field of crystal growth and alloy solidification are presented. The software program CrysVUn is used to simulate alloy solidification experiments carried out in TEXUS sounding rocket missions. Based on this software global thermal models are developed for the furnace inserts Low Gradient Furnace (LGF) and Solidification and Quenching Furnace (SQF) to be operated in the Materials Science Laboratory (MSL) onboard the International Space Station (ISS). These models will be used in order to optimize the process conditions and cartridge designs for the experiments to be carried onboard the ISS

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Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

Cited by 70 publications

References 9 publications

Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

Numerical modeling and investigation of liquid phase epitaxy of Hg_1–xCd_xTe infrared detectors

Numerical modeling of crystal growth and solidification experiments carried out under microgravity conditions

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Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

Cited by 70 publications

References 9 publications

Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

Numerical modeling and investigation of liquid phase epitaxy of Hg1–xCdxTe infrared detectors

Numerical modeling of crystal growth and solidification experiments carried out under microgravity conditions

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Numerical modeling and investigation of liquid phase epitaxy of Hg_1–xCd_xTe infrared detectors