V. Kambilafka, P. Voulgaropoulou, S. Dounis, E. Iliopoulos, M. Androulidaki, V. Šály, M. Ružinský, E. Aperathitis
Transparent p-type thin films, containing zinc oxide phases, have been fabricated from the oxidation of n-type zinc nitride films. The zinc nitride thin films were deposited by r f -magnetron sputtering from a zinc nitride target in pure N 2 and pure Ar plasma. Films deposited in Ar plasma were conductive (resistivity 4.7 × 10 −2 cm and carrier concentrations around 10 20 cm −3 ) Zn-rich Zn x N y films of low transmittance, whereas Zn x N y films deposited in N 2 plasma showed high transmittance (>80%), but f…
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