Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Chu, K.; Yurovchak, Thomas; Chao, P.C.; Creamer, Carlton

doi:10.1109/csics.2013.6659246

Cited by 16 publications

(10 citation statements)

References 1 publication

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“…In 2013 BAE Systems proposed a "device-first" technology that allowed the placement of the diamond heat spreader within 1 µm of the device hotspot [107,108]. After the complete fabrication of the devices, the wafer was bonded to a temporary carrier and the substrate and the GaN buffer layer were removed.…”

Section: Bonded Wafersmentioning

confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. On the search of effective thermal management solutions, the integration of GaN and synthetic diamond with high thermal conductivity and electric breakdown strength shows a tremendous potential. A significant effort has been made in the past few years by both academic and industrial players in the search of a technological process that allows the integration of both materials and the fabrication of high performance and high reliability hybrid devices. Different approaches have been proposed, such as the development of diamond/GaN wafers for further device fabrication or the capping of passivated GaN devices with diamond films. This paper describes in detail the potential and technical challenges of each approach and presents and discusses their advantages and disadvantages.

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Section: Bonded Wafersmentioning

confidence: 99%

Diamond/GaN HEMTs: Where from and Where to?

Mendes

Liehr²,

Li³

2022

Materials

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“…For boundary conditions, an isothermal surface of 85°C was applied to the underside of the module housing. Details of the thermal model can be found in [4].…”

Section: Finite Element Thermal Modelingmentioning

confidence: 99%

S2-T4: Low-temperature substrate bonding technology for high power GaN-on-diamond HEMTs

Chu

Chao

Diaz

et al. 2014

2014 Lester Eastman Conference on High Performance Devices (LEC)

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We report the first demonstration of GaN-ondiamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transferred onto high-quality polycrystalline diamond with thermal conductivity of 1,800 -2,000 W/mK. Resulting GaN-on-diamond HEMTs demonstrated DC current density of 1.0A/mm, transconductance of 330mS/mm, and RF output power density of 6.0W/mm at 10GHz (CW). Finiteelement thermal modeling indicates GaN-on-diamond technology based on low-temperature substrate bonding is capable of 3X increased power per area compared to conventional GaN-on-SiC devices.

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“…Early bonding experiments at high temperatures of about 800°C [17] were limited to small areas (< 2 × 2 cm 2 ). More recently, GaN devices adhesively bonded at low temperatures [18] achieved a current record for GaN-on-diamond with P out of 11 W mm −1 and 51% PAE (10 GHz, 40 V bias) [19].…”

Section: Introductionmentioning

confidence: 99%

“…A bottleneck in thermal performance is posed by defect-rich nucleation layers at the buffer/substrate interface. Moreover, the substrate transfer onto diamond introduces thermally poor stabilization [20], or adhesion layers [18], and the nucleation layer of grown diamond contains additional voids and graphitic compounds within several nm thickness [21]. The material specific thermal boundary resistance (TBR) as calculated from diffuse mismatch models is the theoretical minimum resistance of a GaN/diamond interface, but experimental measurements on GaN-on-diamond devices revealed much higher resistances which was explained by these poor interlayers [22].…”

Section: Introductionmentioning

confidence: 99%

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

Gerrer

Cimalla

Waltereit

et al. 2018

Int. J. Microw. Wireless Technol.

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We present a novel bonding process for gallium nitride-based electronic devices on diamond heat spreaders. In the proposed technology, GaN devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD heat spreaders at 3 GHz and 50 V drain bias show comparable power-added-efficiency and output power (Pout) levels. A thermal analysis of the hybrids was performed by comparison of 2 × 1mm2AlGaN/GaN Schottky diodes on Si, PCD, and SCD, which exhibit a homogeneous field in the channel in contrast to gated transistors. Significantly different currents are observed due to the temperature dependent mobility in the 2DEG channel. These measurements are supported by a 3D thermal finite element analysis, which suggests a large impact of our transfer technique on the thermal resistance of these devices. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN device applications.

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Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Cited by 16 publications

References 1 publication

Diamond/GaN HEMTs: Where from and Where to?

Diamond/GaN HEMTs: Where from and Where to?

S2-T4: Low-temperature substrate bonding technology for high power GaN-on-diamond HEMTs

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

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