volume 134, issue 2-3, P189-192 2006
DOI: 10.1016/j.mseb.2006.06.041
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Abstract: The mechanism of a low-temperature doping of silicon initiated by atomic hydrogen is studied. The formation of thermal donors (TDs) in directplasma hydrogenated n-type Czochralski silicon upon annealing at 450 • C is investigated by a combination of capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS). The expected hydrogen acceleration of TD formation is retrieved and the same goes for the introduction rate of the oxygen thermal donors (OTDs). It is shown that for short annealing times (30 …

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