The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10 5 cm −2 , the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defect…
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