2014
DOI: 10.1103/physrevb.89.054309
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Thermal boundary conductance across rough interfaces probed by molecular dynamics

Abstract: In this article, we report the influence of the interfacial roughness on the thermal boundary conductance between two crystals, using molecular dynamics. We show evidence of a transition between two regimes, depending on the interfacial roughness: when the roughness is small, the boundary conductance is constant taking values close to the conductance of the corresponding planar interface. When the roughness is larger, the conductance becomes larger than the planar interface conductance, and the relative increa… Show more

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Cited by 79 publications
(51 citation statements)
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“…Many of these studies involve detailed models of a rough surface or interface at the atomic level and use either lattice dynamics calculations based on Green's functions analysis [25][26][27][28][29] or molecular dynamics simulations [32][33][34][35]. These advanced studies heavily rely on numerical computations; hence it is difficult to generalize their results beyond specific systems considered in each particular paper.…”
Section: Introductionmentioning
confidence: 99%
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“…Many of these studies involve detailed models of a rough surface or interface at the atomic level and use either lattice dynamics calculations based on Green's functions analysis [25][26][27][28][29] or molecular dynamics simulations [32][33][34][35]. These advanced studies heavily rely on numerical computations; hence it is difficult to generalize their results beyond specific systems considered in each particular paper.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, a number of advanced and sophisticated models of boundary scattering have been applied to the analysis of thermal transport in nanostructures [25][26][27][28][29][30][31][32][33][34][35]. Many of these studies involve detailed models of a rough surface or interface at the atomic level and use either lattice dynamics calculations based on Green's functions analysis [25][26][27][28][29] or molecular dynamics simulations [32][33][34][35].…”
Section: Introductionmentioning
confidence: 99%
“…We observe that the two commonly applied models, the acoustic mismatch model (AMM) and diffuse mismatch model (DMM), do not necessarily lead to values that are comparable to the available experimental data [1,15,17,18]. In all cases, it is clear that the shapes of embedded elements and/or interfaces have an important impact on the TBR [5], [6], [10] [19], [20].…”
Section: Introductionmentioning
confidence: 69%
“…For silicon,  =2331 kgm -3 , C 11 = 16.57×10 10 Nm -2 and C 44 = 7.956×10 10 Nm -2 [36]. The longitudinal velocity v l and the transverse one v t are defined by the materials properties: We solve numerically Eq.…”
Section: B Phonons As Elastic Wavesmentioning
confidence: 99%
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