Thermal and high speed modulation characteristics for AlGaInAs/InP microdisk lasers

Zou, Ling-Xiu; Huang, Yong-Zhen; Liu, Bowen; Lv, Xiaolei; Ma, Xiu-Wen; Yang, Yue-De; Xiao, Jin-Long; Du, Youwei

doi:10.1364/oe.23.002879

Cited by 27 publications

(15 citation statements)

References 17 publications

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“…More recently SSM response with 3-dB bandwidth up to 20 GHz was demonstrated for the AlGaInAs/InP microdisk laser with active region based on 6 QWs with a radius of 7 µm surrounded by BCB-cladding layer [85]. Eye diagrams at the bit rates of 20, 25, and 30 Gbit/s were also measured at the temperature of 14 • C [85].…”

Section: Dynamic Characteristics and Data Transmissionmentioning

confidence: 99%

“…The disadvantage of InP-based microlasers is caused by small energy offsets and low thermal conductivity [87], which results in a significant deterioration of their characteristics with temperature increase. For instance, in reference [85], it was observed that when the temperature rises from 14 to 40 • C, the resonance frequency value drops from 14.9 to about 8.3 GHz. However, dynamic characteristics of much more temperature stable GaAs-based MD lasers are poorly studied.…”

Section: Dynamic Characteristics and Data Transmissionmentioning

confidence: 99%

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Light Emitting Devices Based on Quantum Well-Dots

Maximov¹,

Nadtochiy²,

Mintairov

et al. 2020

Applied Sciences

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We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition of 4–16 monolayers of InxGa1−xAs of moderate indium composition (0.3 < x < 0.5) on GaAs substrates and represent dense arrays of carrier localizing indium-rich regions inside In-depleted residual quantum wells. QWDs are intermediate in properties between 2D quantum wells and 0D quantum dots and show some advantages of both of those. In particular, they offer high optical gain/absorption coefficients as well as reduced carrier diffusion in the plane of the active region. Edge-emitting QWD lasers demonstrate low internal loss of 0.7 cm−1 and high internal quantum efficiency of 87%. as well as a reasonably high level of continuous wave (CW) power at room temperature. Due to the high optical gain and suppressed non-radiative recombination at processed sidewalls, QWDs are especially advantageous for microlasers. Thirty-one μm in diameter microdisk lasers show a high record for this type of devices output power of 18 mW. The CW lasing is observed up to 110 °C. A maximum 3-dB modulation bandwidth of 6.7 GHz is measured in the 23 μm in diameter microdisks operating uncooled without a heatsink. The open eye diagram is observed up to 12.5 Gbit/s, and error-free 10 Gbit/s data transmission at 30 °C without using an external optical amplifier, and temperature stabilization is demonstrated.

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Section: Dynamic Characteristics and Data Transmissionmentioning

confidence: 99%

Section: Dynamic Characteristics and Data Transmissionmentioning

confidence: 99%

Light Emitting Devices Based on Quantum Well-Dots

Maximov¹,

Nadtochiy²,

Mintairov

et al. 2020

Applied Sciences

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“…1(a), which can be fabricated under a less precise process compared with the microdisk lasers evanescently coupled with a waveguide. 17 Furthermore, the mode wavelengths and the full-width at half maximum (FWHM), obtained by fitting the resonant peak with a Lorentzian function, are plotted in Figs. The microdisk resonator was laterally confined by a benzocyclobutene (BCB) cladding layer with a refractive index of 1.54.…”

Section: Static Characteristicsmentioning

confidence: 99%

Dynamic and mode characteristics for AlGaInAs/InP microdisk lasers subject to optical injection

et al. 2015

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Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 08/18/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspxAbstract. Due to the merits of small size and low power consumption, microdisk lasers have been widely investigated as a potential light source for photonic integrated circuits. We investigate the dynamic and mode characteristics for a directional-emission microdisk laser subject to optical injection. At the free-running state, single-mode operation at 1540.16 nm with side-mode suppression ratio of 35 dB is realized for an 8-μm-radius microdisk laser connected with a 2-μm-width output waveguide at 7 mA. Under the injection locking state with the injection optical power of 2 mW, the 3-dB bandwidth of the small signal modulation response is enhanced from 3.4 to 13.7 GHz for the microdisk laser biased at 7 mA. Furthermore, the nonlinear states including four-wave mixing, period-one, and period-two oscillations are also observed and discussed for the microdisk laser subject to the optical injection with different wavelength detuning and optical power.

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“…Микродисковые лазеры [1,2] активно исследуются в последние годы в связи с перспективами их использования в качестве компактных источников для систем оптической связи на кристалле. Оптический резонатор таких лазеров формируется с помощью глубокого травления эпитаксиальной гетероструктуры сквозь волновод и активную область.…”

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