Thermal Analysis of Gallium Oxide-Based Field-Effect Transistors on Different Substrates

Kachhawa, Pharyanshu; Chaudhary, Vaishali; Chaturvedi, Nidhi

doi:10.1007/s11664-022-09871-6

Cited by 5 publications

(2 citation statements)

References 20 publications

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“…These techniques include contact area recess technique, reactive ion etching (RIE), annealing in Ar environment, epitaxial regrowth technique, and plasma bombardment prior to metallization and followed by thermal annealing. [ 26–33 ] Other researchers also observed Schottky contacts over samples that are not exposed to Ar. The process of Ar plasma bombardment, which is comparable to RIE treatment and results in oxygen vacancies and surface states, is responsible for the ohmic nature of contacts.…”

Section: Introductionmentioning

confidence: 97%

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Kachhawa,

Jain,

Chaturvedi

2023

Physica Status Solidi (a)

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Herein, ultra‐wideband gap semiconductor β‐gallium oxide (β–Ga2O3) over sapphire ( orientation) is investigated for ohmic contact improvement with the help of argon (Ar)‐based reactive ion etching (RIE). Postannealing effects of these contacts over ( orientation) gallium oxide samples are also investigated. The surface defects and oxygen vacancies generated by Ar etching lead to the formation of as‐deposited ohmic contacts with the Ti/Au metal stack. A contact resistance of 10.52 Ω mm with a specific contact resistivity of 2.24 × 10−4 Ω cm2 is achieved with 10 min Ar RIE prior metallization. However, the contacts further degrade when samples are subjected to annealing. The electrical measurements and energy‐dispersive X‐ray spectroscopy elemental mappings at samples after annealing reveal that it is due to the formation of titanium oxide (TiOx) compound which acts as an insulator and concurrent with the out‐diffusion of Ga and in‐diffusion of gold. These results show the impact of anisotropy of gallium oxide over different annealing temperatures. These results and techniques may pave the way for better ohmic contacts for gallium oxide‐based high‐voltage and high‐power applications.

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Section: Introductionmentioning

confidence: 97%

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Kachhawa,

Jain,

Chaturvedi

2023

Physica Status Solidi (a)

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“…6,7 In the past decade, b-Ga 2 O 3 metal-oxidesemiconductor field-effect transistors (MOSFETs) have been widely investigated, and significant progress in key device characteristics has been made. 3,4,8 However, commercial applications in low-loss power converters operating at high frequency and harsh environments require efficient and miniaturized b-Ga 2 O 3 power electronics. 9 However, the current power electronics are based on (ultra)wide bandgap (UWBG) semiconductor-based power devices, externally connected to Si-based logic.…”

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confidence: 99%

Monolithic β -Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Khandelwal

Yuvaraja

garcia

et al. 2023

Applied Physics Letters

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In this Letter, we report on a monolithically integrated β-Ga2O3 NMOS inverter integrated circuit (IC) based on heteroepitaxial enhancement mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistors on low-cost sapphire substrates. A gate recess technique was employed to deplete the channel for E-mode operation. The E-mode devices showed an on-off ratio of ∼105 with a threshold voltage of 3 V. In comparison, control devices without the gate recess exhibited a depletion mode (D-mode) with a threshold voltage of [Formula: see text]3.8 V. Furthermore, depletion-load NMOS inverter ICs were fabricated by monolithically integrating D- and E-mode transistors on the same substrate. These NMOS ICs demonstrated inverter logic operation with a voltage gain of 2.5 at VDD = 9 V, comparable with recent GaN and other wide-bandgap semiconductor-based inverters. This work lays the foundation for heteroepitaxial low-cost and scalable β-Ga2O3 ICs for monolithic integration with (ultra)wide bandgap Ga2O3 power devices.

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Gallium Oxide‐Based Field Effect Transistors

Kachhawa,

Masiul Islam,

Chaturvedi

2024

Physica Status Solidi (a)

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The growing interest for power electronics devices demands suitable materials which can perform in harsh conditions. Gallium oxide () has shown tremendous potential in high voltage, high temperature, and gassensing applications due to its unique material properties. is considered to be the next‐generation material for power electronics owing to ultrawide bandgap of 4.5–4.9 eV and high electric field of 8 MV cm−1. These material properties coupled with high‐power figure of merits make a superior material compared to GaN and SiC. Herein, state‐of‐the‐art development and recent breakthroughs in ‐based field‐effect‐ transistors (FETs) highlighting major ongoing research are reviewed. The review describes the material property, band structure, and ‐based field‐effect transistors in detail. Some promising applications capitalizing the epitaxial growth techniques along with the characteristics and performance of ‐based devices are also explained. The prime objective of this review is to provide an up‐to‐date scientific framework pertaining to this niche emerging research area followed by device processing. This survey reveals the potential of ‐based FETs for high‐ voltage and high‐power applications while several critical challenges have to be still overcome. Finally, insights are represented and future perspectives of ‐based transistors along with their hetero‐structures are discussed.

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Thermal Analysis of Gallium Oxide-Based Field-Effect Transistors on Different Substrates

Cited by 5 publications

References 20 publications

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Monolithic β -Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Gallium Oxide‐Based Field Effect Transistors

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