Theory of Tunneling

Abstract

The theory of ``direct'' and ``phonon-assisted'' tunneling is reviewed. Theoretical I–V characteristics are calculated using the constant field model. Generalizations to nonconstant field and more complicated band structure models are discussed briefly.

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

“…5c. This behavior is characteristic of a tunnel diode [33][34][35][36][37][38][39][40][41] and is consistent with degenerative doping and the introduction of donor states below the conduction band minimum.…”

Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements

“…20. The active dopant concentrations n ¼ 3:3 Â19 19 cm À3 and p ¼ 1:1 Â 19 19 cm À3 are obtained with Hall measurements and satisfy the previously mentioned requirements for exponential BTBT current. Transmission Electron Microscopy (HR-HAADF-STEM, Fig.…”

Designing a low-voltage, high-current tunneling transistor

“…The tunneling probability, T, is [7]: For simplicity, we will assume that the electric field across the tunneling junction, F, is constant and equal to the peak electric field. The effective mass for tunneling [1,8,9] is * tunnel m 1 , and EG is the band gap.…”

“…of 2d Channels × 1d Conductance This is the same as taking the appropriate limits of Kane's tunneling theory [7] (except for a factor of π 2 /9).…”