Theory of the electronic structure of GaN/AlN hexagonal quantum dots

Andreev, A. D.; O’Reilly, Eoin P.

doi:10.1103/physrevb.62.15851

Cited by 345 publications

(318 citation statements)

References 53 publications

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“…This strain creates an elastic energy which is one of the determining factors in the formation of dots in the Stranski-Krastanov [4] mode. The strain also changes the potential profile experienced by charger carriers, necessary to calculate the electronic eigenstates [5,6]. Several methods to calculate the strain profile are available, which have been successfully applied to semiconductor nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Strain in Capped and Uncapped Self-Assembled Ge/Si Quantum Dots

2015

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In this study we numerically calculate the spatial profile of mechanical strain on self-assembled germanium (Ge) quantum dots (QDs) grown on a silicon (Si) substrate. Although the topic has been exhaustively studied, interesting features have not been explained or even mentioned in the literature yet. We studied the effect of the cap layer considering two cases: capped QDs (where a Si cap is present above the Ge QDs) and uncapped QDs (where no Si is present above the Ge QDs). We observed that Ge in the capped QDs is more strained compared with the the uncapped QDs. This expected effect is attributed to the additional tension from the Si cap layer. However, the situation is opposite for the Si substrate, it is more strained in the uncapped QD because the Ge layer is less strained in this case. We also calculated the band-edge alignment for the electrons and holes.Keywords quantum dots · mechanical strain · uncapped quantum dot · capped quantum dot 1 Introduction

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Section: Introductionmentioning

confidence: 99%

Mechanical Strain in Capped and Uncapped Self-Assembled Ge/Si Quantum Dots

2015

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“…A general model for bulk strained wurtzite (WZ) semiconductors 1,2 has been extended later to quantum wells (QWs) 3 and quantum dots (QDs) 4,5 . A block-diagonalization of the valence band (VB) Hamiltonian is possible for a strained bulk sample 1,2 or a homogeneous and unstrained cylindrical quantum nanostructure QN 6 .…”

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confidence: 99%

“…A block-diagonalization of the valence band (VB) Hamiltonian is possible for a strained bulk sample 1,2 or a homogeneous and unstrained cylindrical quantum nanostructure QN 6 . The simulation of electronic and optical properties requires a precise description of elastic and piezoelectric effects 4,5 .…”

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confidence: 99%

“…A twofold degeneracy is also obtained with All the states in the S-shell of the CB correspond to this case. It is then not surprising that the CB GS contains significant contributions from the VB states of the bulk materials [4][5][13][14][15] . In the first case, the electronic density is given by ( ) It is possible to study the influence of spin-orbit coupling using the complete 8x8…”

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confidence: 99%

“…The CB ∞v B axis for the geometry is perpendicular to the (0001) plane (parallel to the [0001] c axis). Physical parameters for InN and GaN materials 9,10 are used for the WZ lattice 3,4 . If the strain field is calculated using a continuum mechanical model (elasticity), the geometry of the deformed inhomogeneous QN still corresponds to the CB ∞v B symmetry.…”

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Symmetry analysis and exact model for the elastic, piezoelectric, and electronic properties of inhomogeneous and strained wurtzite quantum nanostructures

Even

2009

Applied Physics Letters

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Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots

Brown

Elsass

Poblenz

et al. 2001

phys. stat. sol. (b)

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We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonstrate that the QDs have diameters of (30 AE 5) nm and heights of (3 AE 1) nm. PL from the quantum dots was compared to that of a gallium nitride growth template film to unambiguously demonstrate the contribution of the QDs to the spectra. Integrated PL intensity was observed to remain strong well above 300 K, and we attribute the decrease in the quantum dot PL at higher temperatures to phonon-mediated carrier ionization of deep level.

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Theory of the electronic structure of GaN/AlN hexagonal quantum dots

Cited by 345 publications

References 53 publications

Mechanical Strain in Capped and Uncapped Self-Assembled Ge/Si Quantum Dots

Mechanical Strain in Capped and Uncapped Self-Assembled Ge/Si Quantum Dots

Symmetry analysis and exact model for the elastic, piezoelectric, and electronic properties of inhomogeneous and strained wurtzite quantum nanostructures

Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots

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