Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion, and pulse collisions

Abstract

Abstract-We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other mode-locking parameters, like pulse width and pulse energy, are determined by the mode-locking system. System parameters, like bandwidth, dispersion, and self-phase modutation are shown to play an important role in mode-locking conditions and results. We also discuss the effects of pulse collisions and positions of the mode-locking elements inside the cavity on mode-locking stability and show that these effects can be easily included in the presented model. Finally, we give a number of design rules and recommendations for fabricating passively mode-locked lasers.

Modeling of integrated extended cavity InP/InGaAsP semiconductor modelocked ring lasers

“…A linear gain-carrier relation is commonly used in lasers since the typically the variation in carrier density in the amplifier in time is over a limited range. However it can be seen that the slope of the curve becomes smaller at higher values of N and that the linear gain coefficient would need to be corrected (Koumans and van Roijen 1996). Using the logarithmic relation, no correction is needed.…”

“…As was identified and discussed by Avrutin et al (2000), there are two main types of time-domain modelocking theories. There are the lumped-element models (Koumans and van Roijen 1996;Leegwater 1996) and the fully distributed time-domain models (Yu et al 1998). Another approach that is well developed is a travelling wave model (Zhang and Carroll 1992;Radziunas 2006;Bandelow et al 2006).…”

Theory of passively mode-locked photonic crystal semiconductor lasers

“…Our model is a lumped element model, where the dispersion of the laser cavity and bandwidth limitation of the active sections are treated via a separate component. This approximation is allowed, as long as the effect of the dispersion and bandwidth limitation on the pulse reshaping mechanism is limited [12]. Hence, with the use of a strongly dispersive PCW, this approximation is important to keep in mind.…”

Sub-picosecond pulse and terahertz optical frequency comb generation by monolithically integrated linear mode-locked laser

“…As the SOA and SA lengths play an important role in determining the performance quality of mode-locked laser, the use of passive waveguides reduces the self-phase modulation in active medium [12,13]. Using MMIs and curved waveguides, mode-locked lasers in ring geometry are feasible [14,15].…”