Theoretical and experimental study of plasmonic effects in heavily doped gallium arsenide and indium phosphide

Čada, Michael; Blažek, D.; Pištora, Jaromı́r; Postava, Kamil; Široký, P.

doi:10.1364/ome.5.000340

Cited by 26 publications

(17 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the quest for alternative materials suitable for a certain wavelength range in the vast mid-IR region has been the focus of research in last several years. Consequently, various plasmonic alternatives have been investigated: transparent conductive oxides [22,23], heavily doped III-V semiconductors [24][25][26], polar materials [27], 2D materials (graphene, hBN, etc.) [28].…”

Section: Introductionmentioning

confidence: 99%

Large-scale high aspect ratio Al-doped ZnO nanopillars arrays as anisotropic metamaterials

Shkondin¹,

Takayama

Panah

et al. 2017

Opt. Mater. Express

View full text Add to dashboard Cite

High aspect ratio free-standing Al-doped ZnO (AZO) nanopillars and nanotubes were fabricated using a combination of advanced reactive ion etching and atomic layer deposition (ALD) techniques. Prior to the pillar and tube fabrication, AZO layers were grown on flat silicon and glass substrates with different Al concentrations at 150-250 °C. For each temperature and Al concentration the ALD growth behavior, crystalline structure, physical, electrical and optical properties were investigated. It was found that AZO films deposited at 250 °C exhibit the most pronounced plasmonic behavior with the highest plasma frequency. During pillar fabrication, AZO conformally passivates the silicon template, which is characteristic of typical ALD growth conditions. The last step of fabrication is heavily dependent on the selective chemistry of the SF 6 plasma. It was shown that silicon between AZO structures can be selectively removed with no observable influence on the ALD deposited coatings. The prepared free-standing AZO structures were characterized using Fourier transform infrared spectroscopy (FTIR). The restoration of the effective permittivities of the structures reveals that their anisotropy significantly deviates from the effective medium approximation (EMA) prognoses. It suggests that the permittivity of the AZO in tightly confined nanopillars is very different from that of flat AZO films.

show abstract

Section: Introductionmentioning

confidence: 99%

Large-scale high aspect ratio Al-doped ZnO nanopillars arrays as anisotropic metamaterials

Shkondin¹,

Takayama

Panah

et al. 2017

Opt. Mater. Express

View full text Add to dashboard Cite

show abstract

“…This choice makes it possible to take into account the accumulation of defects in the structure when the doping concentration increases. To confirm the consistency of this choice, we calculated the free electron damping γ by using γ = e/m * 0 µ where µ represents the mobility of the electrons [24,25]. In Ref.…”

Section: The Green Dyadic Methods (Gdm) For Submicrometer Scale Hyperdmentioning

confidence: 99%

Theory of plasmonic properties of hyper-doped silicon nanostructures

Majorel

Paillard

Patoux

et al. 2019

Optics Communications

View full text Add to dashboard Cite

The presence of a Localized Surface Plasmon Resonance in doped semiconductor nanostructures opens a new field for plasmonics and metasurfaces. Semiconductor nanostructures can be easily processed, have weak dissipation losses, and the plasmon resonance can be tuned from the mid-to the near-infrared spectral range by changing the dopant concentration (in complement to the constituent material, the size and shape of the nanostructure). We present in this paper an extension of the Green Dyadic Method applied to the case of doped silicon nanostructures of arbitrary shape on a planar silica substrate. The method is used to compute both far-and near-fied optical properties, such as the extinction efficiency and the electromagnetic near-field intensity inside and around any doped silicon nanostructure, respectively. This theoretical approach provides an important tool for active dopant characterization in doped semiconductor nanostructures, for near-field imaging of complex nanoantennas produced by electron beam lithography, and for the definition of doped semiconductor-based metasurfaces.During the three last decades, a huge amount of work has been devoted to the understanding of the plasmonic properties of complex metallic nanostructures, either individually or as the elementary brick of a metamaterial. This interest was also driven by potential applications in sensing devices [1], nanophotonic devices [2], photocatalysis [3], and field-enhanced spectroscopies [4,5,6,7]. However, the use of metals such as gold or silver is still an issue due to a poor compatibility with the semiconductor processing technology, and to strong dissipation losses at optical and infrared frequencies.Recently, a new category of plasmonic materials emerged, with the study of Localized Surface Plasmon Resonance (LSPR) in heavily doped semiconductor nanostructures and metamaterials [8,9,10,11]. Compared to metals, the imaginary part of the dielectric constant in the visible and infrared range is low for most semiconductors, leading to weak losses. As for metals, the LSPR frequency is tunable by the constituent material, the size and shape of the nanostructure, and its dielectric environment. However, the active dopant concentration, thus the free carrier (electrons or holes) concentration, allows to finely tune the LSPR frequency [8,10]. Notably, the lower order of magnitude of carrier density in degenerate semiconductors with respect to noble metals has an attractive consequence: even a minor modification of the * Corresponding author

show abstract

“…whereĒ,D,H are the electric, displacement and magnetic field vectors, respectively,J , ρ, N are the current density, the charge density, and the charge carrier density in the conducting medium (semiconductor), respectively,v is the velocity of the moving carriers (charges -electrons), m = m 0 m * is the product of the free electron mass and its effective mass, e is the electron charge, ε 0 and μ 0 are the vacuum permittivity and permeability, respectively, ε ∞ and ε d are the relative permittivity of the semiconductor (dispersed background value, for details see [12]) and the dielectric, respectively, ω p is the plasma frequency, and subscripts S and D refer to the semiconductor and dielectric materials, respectively. Note that a semiconductor is used in the description here; however, all derivations are equally applicable to any other conducting medium such as metal or graphine, with appropriate relevant material parameters used.…”

Section: Theorymentioning

confidence: 99%

“…This is shown in Figure 2. Measured material parameters and doping of GaAs were used [12] for generating these figures, see Table I.…”

Section: Normalizationmentioning

confidence: 99%

“…Recent interest in finding materials, structures and methods [6]- [11] to generate optical plasmonic effects in semiconductors has been quite promising. An interesting application for determining experimentally important semiconductor parameters such as relaxation time, mobility and effective mass exploiting optical plasmonic effects has been reported [12].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Plasmon Dispersion at an Interface Between a Dielectric and a Conducting Medium With Moving Electrons

Čada

Pištora

2016

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Dispersion of the plasmonic behavior at an interface between a dielectric and a conducting medium (e.g. metal, doped semiconductor, graphine, or superconductor) is studied considering the free electron gas in the conducting medium be moving along the interface. The derivation of the dispersion equation is provided, including the damping and the electrons drift. It is shown that the electrons behave as a compressible gas giving rise to new features and new surface plasmon wave solutions of the dispersion equation. A normalized form of the derived dispersion equation is obtained. It is then employed to study the general properties numerically using typical semiconductor material parameters found recently experimentally. Results are discussed in the light of possible novel applications of these physical effects such as, for example, plasmons propagation loss compensation.

show abstract

Theoretical and experimental study of plasmonic effects in heavily doped gallium arsenide and indium phosphide

Cited by 26 publications

References 17 publications

Large-scale high aspect ratio Al-doped ZnO nanopillars arrays as anisotropic metamaterials

Large-scale high aspect ratio Al-doped ZnO nanopillars arrays as anisotropic metamaterials

Theory of plasmonic properties of hyper-doped silicon nanostructures

Plasmon Dispersion at an Interface Between a Dielectric and a Conducting Medium With Moving Electrons

Contact Info

Product

Resources

About